Loading...

MMBTA42LT1HTSA1

Infineon Technologies

MMBTA42LT1HTSA1 by Infineon Technologies

Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.

Median Price

$0.449

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.449

100+ parts

$0.449

1k+ parts

$0.449

10k+ parts

-

50

$0.449

$0.449

$0.449

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 595 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

-

595

$0.427

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.440

-

-

-

Chip Stock

USA . 296,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

296,980

-

-

-

-

Vyrian

USA . 6,898 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,898

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,692 parts In-Stock

1+ parts

$0.275

100+ parts

-

1k+ parts

-

10k+ parts

$0.270

6,692

$0.275

-

-

$0.270

Argo Parts USA

USA . 4,585 parts In-Stock

1+ parts

$0.275

100+ parts

-

1k+ parts

-

10k+ parts

$0.267

4,585

$0.275

-

-

$0.267

Ampacity Inc.

Singapore . 50 parts In-Stock

1+ parts

$0.382

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.382

-

-

-

Corphita

USA . 50 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.404

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.449

100+ parts

$0.449

1k+ parts

$0.449

10k+ parts

-

50

$0.449

$0.449

$0.449

-

Corohmni

South Africa . 412 parts In-Stock

1+ parts

$0.497

100+ parts

-

1k+ parts

-

10k+ parts

-

412

$0.497

-

-

-

Aztec Data Supply Inc.

USA . 3,498 parts In-Stock

1+ parts

$0.524

100+ parts

-

1k+ parts

-

10k+ parts

-

3,498

$0.524

-

-

-

Modulus Dynamics

Lithuania . 22,188 parts In-Stock

1+ parts

$0.595

100+ parts

$0.571

1k+ parts

$0.547

10k+ parts

-

22,188

$0.595

$0.571

$0.547

-

Semicontronic

India . 50 parts In-Stock

1+ parts

$0.830

100+ parts

$0.809

1k+ parts

$0.805

10k+ parts

-

50

$0.830

$0.809

$0.805

-

AZTECH Wire

Italy . 828 parts In-Stock

1+ parts

$18.984

100+ parts

-

1k+ parts

-

10k+ parts

-

828

$18.984

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,756 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,756

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.431

1k+ parts

$0.418

10k+ parts

$0.409

500

-

$0.431

$0.418

$0.409

Overview

Elevate your electronic designs with the MMBTA42LT1HTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Small Signal Bipolar Junction Transistors that are essential for a wide range of applications. With a high DC current gain of 40 and a maximum collector-emitter voltage of 300V, this NPN transistor offers superior performance and reliability. Whether you're working on automotive electronics or consumer electronics, this transistor's versatility and durability make it a valuable addition to any project. Choose the MMBTA42LT1HTSA1 for unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during manufacturing.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, ideal for space-constrained applications and PCB layouts.

Terminal Form: GULL WING

Gull wing terminals make soldering and rework easier, enhancing the overall assembly process and reliability of the transistor.

No. of Terminals: 3

Having 3 terminals allows for versatile connection options, enabling flexibility in circuit design and functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and improves thermal performance, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures consistent and stable amplification characteristics, essential for reliable signal processing.

Maximum Collector-Emitter Voltage: 300 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, increasing its versatility in different applications.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability, suitable for various operating conditions and demanding applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows for adequate power handling capability, making it suitable for low to medium power applications.

Terminal Position: DUAL

The dual terminal position provides additional flexibility in circuit layout and connection options, accommodating different design requirements.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the transistor meets automotive quality and reliability requirements, making it suitable for automotive applications.

Nominal Transition Frequency (fT): 70 MHz

With a high nominal transition frequency, this transistor is capable of fast switching and high-frequency performance, ideal for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA42LT1HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA42LT1HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20