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2SAR533PT100

ROHM

2SAR533PT100 by ROHM

ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.

Median Price

$0.174

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Overview

Discover the power of ROHM's 2SAR533PT100 Small Signal Bipolar Junction Transistor! This high-quality PNP transistor is perfect for switching applications, offering a maximum collector current of 3A and a minimum DC current gain of 180. With a maximum operating temperature of 150°C and a peak reflow temperature of 260°C, this transistor provides reliable performance in a compact package. Trust ROHM's expertise in semiconductor manufacturing to deliver a product that meets your needs with precision and efficiency. Elevate your electronics projects with the 2SAR533PT100 and experience the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into circuits requiring PNP transistors, expanding the compatibility of this product.

Configuration: SINGLE

Single configuration simplifies circuit design and saves space, making this transistor ideal for compact applications.

Transistor Application: SWITCHING

Switching application capability enables this transistor to efficiently control the flow of current, making it suitable for a wide range of switching applications.

Surface Mount: YES

Surface mount compatibility facilitates easy and efficient PCB assembly, reducing manufacturing time and costs.

Package Shape: RECTANGULAR

Rectangular package shape helps in easy placement and orientation during PCB assembly, ensuring proper connection and alignment.

Terminal Form: FLAT

Flat terminal form simplifies soldering process and ensures secure connections, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Three terminals provide the necessary connections for base, collector, and emitter, enabling proper transistor functionality in circuits.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capacity of 2W allows the transistor to handle power efficiently and operate reliably even under high load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact circuit designs where size is a constraint.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures stable and consistent amplification of current signals, enhancing the performance of the transistor in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows the transistor to operate reliably in elevated temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating of 50V provides ample voltage handling capability, making this transistor suitable for diverse voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material for the transistor element offers excellent electrical properties, ensuring high performance and reliability in various circuit applications.

Maximum Collector Current (IC): 3 A

High maximum collector current rating of 3A allows the transistor to handle large current loads, making it suitable for power applications where high current is required.

Terminal Finish: TIN COPPER

Tin copper terminal finish provides good solderability and conductivity, ensuring robust and reliable electrical connections for the transistor.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and soldering process, making installation and connection of the transistor hassle-free.

Case Connection: COLLECTOR

Collector case connection facilitates easy mounting and heat dissipation, ensuring optimal performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 10

Short maximum time at peak reflow temperature ensures efficient soldering process with minimal heat exposure, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance of 260°C allows for reliable soldering process even in high-temperature manufacturing environments.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency of 300MHz indicates fast switching speed and high-frequency performance of the transistor, making it suitable for applications requiring quick signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR533PT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SAR533PT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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