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2SAR340PT100Q

ROHM

2SAR340PT100Q by ROHM

ROHM 2SAR340PT100Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 0.1A. Ideal for amplifier applications due to its small outline package style and max operating temperature of 150°C. Suitable for surface mount designs with a rectangular package shape and flat terminal form.

Median Price

$1.110

Lifecycle Status

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5

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1k+

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DigiKey

USA . 854 parts In-Stock

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$1.110

100+ parts

$0.455

1k+ parts

$0.352

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854

$1.110

$0.455

$0.352

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Mouser Electronics

USA . 30 parts In-Stock

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$1.110

100+ parts

$0.456

1k+ parts

$0.318

10k+ parts

$0.240

30

$1.110

$0.456

$0.318

$0.240

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.409

1k+ parts

$0.310

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1,000

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$0.409

$0.310

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VNN

France . 3,060 parts In-Stock

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3,060

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 393 parts In-Stock

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$0.348

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393

$0.348

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your amplifier designs with the 2SAR340PT100Q by ROHM, a high-quality PNP bipolar junction transistor perfect for small signal applications. Manufactured by ROHM, a trusted industry leader, this transistor offers reliable performance and durability. Ideal for amplifiers, this transistor provides a maximum VCEsat of 0.4V and a maximum power dissipation of 2W, ensuring optimal functionality. Upgrade your projects with the 2SAR340PT100Q and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and facilitating automated manufacturing processes.

Maximum VCEsat: 0.4 V

Low saturation voltage helps reduce power dissipation and enhances efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard packaging and mounting processes, simplifying usage.

Terminal Form: FLAT

Flat terminals ensure secure and reliable connections, enhancing the performance and reliability of the transistor.

No. of Terminals: 3

Simplifies connection and integration in circuits, making it suitable for various amplifier applications.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability allows the transistor to handle large power loads, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space in circuit design, making it suitable for compact amplifier applications.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures optimal amplification performance in amplifier circuits, delivering high-quality output signals.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function reliably in various environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating provides flexibility in circuit design, allowing for a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring stable operation in amplifier circuits.

Maximum Collector Current (IC): 0.1 A

Able to handle significant collector currents, making it suitable for various amplifier applications.

Terminal Position: SINGLE

Single terminal position simplifies integration and connection, ensuring ease of use in amplifier circuits.

Case Connection: COLLECTOR

Direct collector connection simplifies circuit design and enhances performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR340PT100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.4 V

Trade Compliance

2SAR340PT100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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