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2SAR522EBTL

ROHM

2SAR522EBTL by ROHM

ROHM 2SAR522EBTL is a PNP BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 0.2A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

Median Price

$0.025

Lifecycle Status

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5

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1k+

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Verical

USA . 2,950 parts In-Stock

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$0.019

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$0.019

Chip1Stop

Japan . 1,391 parts In-Stock

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$0.031

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$0.021

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VNN

France . 5,016 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,987 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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Ampacity Inc.

Singapore . 1,423 parts In-Stock

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$0.016

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CoreStaff

Japan . 1,869 parts In-Stock

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$0.116

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$0.045

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$0.026

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1,869

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$0.026

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Continental Prestige Electronics

USA . 2,999 parts In-Stock

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$0.190

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$0.092

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$0.036

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$0.023

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RC Electronics

USA . 115,496 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Aranea Global

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Robosynatics

Brazil . 450 parts In-Stock

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Lucentia Tech

USA . 450 parts In-Stock

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$0.800

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$0.741

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450

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$0.741

Overview

Unlock the power of precision with the 2SAR522EBTL by ROHM. Crafted with excellence by a renowned manufacturer, this Small Signal Bipolar Junction Transistor offers unparalleled performance in switching applications. With its PNP polarity and high DC current gain, this transistor delivers reliable results with a maximum operating temperature of 150°C. Experience seamless functionality and exceptional quality with this cutting-edge component that promises to elevate your projects to new heights. Invest in the best with ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and troubleshooting by having a single transistor in the package.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving space and simplifying assembly.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low-voltage applications, ensuring safe operation within specified limits.

Nominal Transition Frequency (fT): 350 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR522EBTL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SAR522EBTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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