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2SAR502U3T106

ROHM

2SAR502U3T106 by ROHM

ROHM 2SAR502U3T106 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and fT of 520MHz. Ideal for amplifier applications due to its low power dissipation (0.2W), high collector-emitter voltage (30V), and small outline package style. Suitable for surface mount designs with GULL WING terminals.

Median Price

$0.155

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 32,789 parts In-Stock

1+ parts

$0.370

100+ parts

$0.141

1k+ parts

$0.093

10k+ parts

$0.061

32,789

$0.370

$0.141

$0.093

$0.061

DigiKey

USA . 6,999 parts In-Stock

1+ parts

$0.370

100+ parts

$0.140

1k+ parts

$0.092

10k+ parts

-

6,999

$0.370

$0.140

$0.092

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Newark

USA . 2,100 parts In-Stock

1+ parts

$0.381

100+ parts

$0.134

1k+ parts

$0.095

10k+ parts

-

2,100

$0.381

$0.134

$0.095

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Verical

USA . 2,640 parts In-Stock

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$0.097

10k+ parts

$0.094

2,640

-

-

$0.097

$0.094

Chip1Stop

Japan . 2,207 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

$0.059

10k+ parts

$0.056

2,207

-

$0.082

$0.059

$0.056

Farnell

UK . 2,205 parts In-Stock

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-

100+ parts

$0.114

1k+ parts

$0.072

10k+ parts

$0.055

2,205

-

$0.114

$0.072

$0.055

Element14

Singapore . 2,205 parts In-Stock

1+ parts

-

100+ parts

$0.155

1k+ parts

$0.093

10k+ parts

$0.070

2,205

-

$0.155

$0.093

$0.070

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VNN

France . 4,750 parts In-Stock

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4,750

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Nova Conductors

Japan . 40 parts In-Stock

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40

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Ampacity Inc.

Singapore . 8,890 parts In-Stock

1+ parts

$0.057

100+ parts

-

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8,890

$0.057

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CoreStaff

Japan . 315 parts In-Stock

1+ parts

$0.144

100+ parts

$0.143

1k+ parts

$0.062

10k+ parts

$0.056

315

$0.144

$0.143

$0.062

$0.056

Continental Prestige Electronics

USA . 465 parts In-Stock

1+ parts

$0.339

100+ parts

$0.131

1k+ parts

$0.065

10k+ parts

$0.047

465

$0.339

$0.131

$0.065

$0.047

Argo Parts USA

USA . 5,196 parts In-Stock

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5,196

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Enhance your electronic projects with the 2SAR502U3T106 by ROHM, a high-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees reliability and performance. Manufactured by industry leader ROHM, this PNP transistor offers exceptional amplification capabilities in a compact package, making it ideal for a wide range of applications. With a low VCEsat of 0.4V and a maximum operating temperature of 150°C, this transistor delivers superior efficiency and power dissipation. Trust ROHM's expertise and innovation to elevate your designs with the 2SAR502U3T106, providing unmatched value and benefits to customers seeking top-notch electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Surface Mount: YES

The surface mount capability facilitates easy and efficient PCB assembly, saving time and enhancing the overall design.

Maximum VCEsat: 0.4 V

Low VCEsat value reduces power consumption and improves overall efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and soldering on the PCB, optimizing space utilization and improving manufacturability.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, ensuring stable performance in various operating conditions.

No. of Terminals: 3

Having 3 terminals simplifies circuit connections and enhances compatibility with standard electronic components.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation rating ensures reliable operation and minimizes heat generation, improving long-term durability.

Package Style (Meter): SMALL OUTLINE

Small outline package style enables compact and space-saving designs, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient signal amplification and reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for versatile application in varied environments without compromising performance.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance minimizes signal distortion and ensures high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating provides safety margin and allows for reliable operation under varying voltage conditions.

Transistor Element Material: SILICON

Silicon material offers high-performance characteristics and reliability, ensuring consistent operation over extended periods.

Maximum Collector Current (IC): 0.5 A

High collector current rating enables the transistor to handle larger currents, suitable for various amplifier applications.

Terminal Finish: TIN

Tin finish provides corrosion resistance and ensures long-term reliability of terminal connections in different environmental conditions.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit connections and compatibility with different PCB layouts.

Nominal Transition Frequency (fT): 520 MHz

High transition frequency enables efficient signal amplification and performance in high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR502U3T106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SAR502U3T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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