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2SAR293P5T100

ROHM

2SAR293P5T100 by ROHM

ROHM 2SAR293P5T100 is a PNP BJT transistor with hFE of 270, VCE of 30V, and fT of 320MHz. Ideal for amplifier applications due to its small outline package and high collector current capability. Suitable for surface mount designs with single terminal position.

Median Price

$0.124

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Arrow

USA . 527 parts In-Stock

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Mouser Electronics

USA . 1,342 parts In-Stock

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$0.144

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Chip1Stop

Japan . 1,308 parts In-Stock

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Verical

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Nova Conductors

Japan . 600 parts In-Stock

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Cyclops Electronics Ltd

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Vyrian

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Ampacity Inc.

Singapore . 1,450 parts In-Stock

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Semicontronic

India . 1,238 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Continental Prestige Electronics

USA . 4,287 parts In-Stock

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Argo Parts USA

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Corohmni

South Africa . 642 parts In-Stock

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CoreStaff

Japan . 3,000 parts In-Stock

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Aztec Data Supply Inc.

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Authorized Procurement Solutions

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Epart123

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Perfect Parts

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Overview

Enhance your electronic projects with the 2SAR293P5T100 by ROHM! Manufactured with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers high quality performance for amplifier applications. With a maximum collector-emitter voltage of 30V and a robust terminal finish of tin, this PNP transistor provides reliability and efficiency. Trust ROHM's reputation for excellence and choose the 2SAR293P5T100 for your next project. Elevate your designs with the best in the industry!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, enhancing its durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as in certain amplifier circuits.

Configuration: SINGLE

Simplified circuit design and easier integration into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Facilitates easy and quick assembly onto printed circuit boards, reducing manufacturing time and costs.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: FLAT

Allows for easy soldering and secure connection.

No. of Terminals: 3

Simple and straightforward connectivity in applications requiring three terminal connections.

Package Style (Meter): SMALL OUTLINE

Compact package style suitable for small electronic devices and densely populated PCBs.

Minimum DC Current Gain (hFE): 270

High DC current gain for efficient amplification and signal processing.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to medium voltage applications, ensuring safe operation within specified voltage limits.

Transistor Element Material: SILICON

Provides reliable performance and stability in various operating conditions.

Maximum Collector Current (IC): 1 A

Able to handle current up to 1 A, making it suitable for medium power applications.

Terminal Finish: TIN

Enhanced solderability and conductivity for reliable terminal connections.

Terminal Position: SINGLE

Simplified terminal configuration for easy integration into circuit designs.

Case Connection: COLLECTOR

Clear indication of case connection for proper circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 10

Designed for quick and efficient solder reflow processes, reducing production time.

Peak Reflow Temperature °C: 260

Sufficient temperature resistance for standard soldering processes without affecting transistor performance.

Nominal Transition Frequency (fT): 320 MHz

High frequency response for demanding signal processing and frequency amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR293P5T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SAR293P5T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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