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NST489AMT1

Onsemi

NST489AMT1 by Onsemi

The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.

Median Price

$0.551

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.551

100+ parts

$0.579

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$0.546

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3,000

$0.551

$0.579

$0.546

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Chip Stock

USA . 27,000 parts In-Stock

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Vyrian

USA . 8,414 parts In-Stock

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Digiode

USA . 1,483 parts In-Stock

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1,483

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Distributors (Availability)

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Corohmni

South Africa . 174 parts In-Stock

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$0.551

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174

$0.551

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AZTECH Wire

Italy . 238 parts In-Stock

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$18.210

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238

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Component Stockers USA

USA . 655 parts In-Stock

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$99.990

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655

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TANS Electronics

Latvia . 7,663 parts In-Stock

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Problanco Electronics

Mexico . 6,984 parts In-Stock

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SupplyDigital Components

Austria . 4,448 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 1,498 parts In-Stock

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Corphita

USA . 804 parts In-Stock

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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Overview

Enhance your electronic circuits with the NST489AMT1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its NPN polarity and single configuration, this transistor offers reliable performance and durability. Perfect for surface mount applications, this transistor boasts a maximum collector current of 2A and a nominal transition frequency of 300 MHz. Trust in Onsemi's expertise to deliver exceptional products that meet your needs. Upgrade your designs today with the NST489AMT1 and experience unparalleled value and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body helps to reduce cost and improve reliability, making it a cost-effective and durable choice.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration in circuits where NPN transistors are commonly used, providing compatibility and versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and improves ease of use, making it suitable for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance, ideal for use in switching circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the PCB, making it suitable for compact designs.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and secure connections, ensuring reliability in various applications.

Maximum Power Dissipation (Abs): 1.75 W

With a maximum power dissipation of 1.75 W, this transistor can handle moderate power levels, offering reliability and durability in operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements and enhances thermal performance, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor provides consistent amplification capabilities, ensuring stability in circuit operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, offering reliability in various applications.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30 V allows for safe operation within specified voltage limits, enhancing reliability in circuit operation.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high performance, reliability, and temperature stability, making it a reliable choice for various applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate current levels, providing reliability in various switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and electrical conductivity, making it easy to solder and ensuring reliable connections.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and layout, allowing for easy integration and efficient connections.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes, ensuring reliable assembly.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C allows for reliable soldering and assembly processes, ensuring long-term performance and durability.

Nominal Transition Frequency (fT): 300 MHz

With a nominal transition frequency of 300 MHz, this transistor offers high-speed performance and fast switching capabilities, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST489AMT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NST489AMT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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