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NST45011MW6T1G

Onsemi

NST45011MW6T1G by Onsemi

NST45011MW6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max operating temp of 150°C, and min DC current gain of 200 (hFE). With a package style of small outline and surface mount capability, it offers high performance in compact designs.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

24

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1k+

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Newark

USA . 205 parts In-Stock

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$0.577

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$0.224

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$0.150

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205

$0.577

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$0.150

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DigiKey

USA . 6,007 parts In-Stock

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$0.590

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$0.231

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$0.156

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6,007

$0.590

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$0.156

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Mouser Electronics

USA . 4,775 parts In-Stock

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$0.590

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$0.231

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$0.156

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$0.109

4,775

$0.590

$0.231

$0.156

$0.109

Rochester

USA . 159,000 parts In-Stock

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$0.169

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$0.141

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$0.125

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$0.141

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Arrow

USA . 30,000 parts In-Stock

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Verical

USA . 30,000 parts In-Stock

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$0.106

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Master Electronics

USA . 18,000 parts In-Stock

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$0.161

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$0.102

18,000

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$0.102

Farnell

UK . 455 parts In-Stock

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$0.188

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$0.126

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$0.102

455

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$0.188

$0.126

$0.102

Element14

Singapore . 455 parts In-Stock

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$0.317

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$0.214

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$0.190

455

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$0.190

Chip1Stop

Japan . 13 parts In-Stock

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Digiode

USA . 594 parts In-Stock

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$0.132

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$0.132

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Nova Conductors

Japan . 100 parts In-Stock

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$0.171

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100

$0.171

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TME

Poland . 2,980 parts In-Stock

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$0.550

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$0.211

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$0.187

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2,980

$0.550

$0.211

$0.187

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.563

100+ parts

$0.281

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$0.113

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$0.084

3,000

$0.563

$0.281

$0.113

$0.084

Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 46,874 parts In-Stock

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IBS Electronics

USA . 18,000 parts In-Stock

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$0.330

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$0.140

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$0.140

Prism Electronics

USA . 6,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.131

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$0.131

ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 989 parts In-Stock

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ComSIT USA

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SPM Sales

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Semicontronic

India . 47,001 parts In-Stock

1+ parts

$0.118

100+ parts

$0.115

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$0.114

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47,001

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$0.114

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Ampacity Inc.

Singapore . 46,972 parts In-Stock

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$0.118

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Corohmni

South Africa . 84 parts In-Stock

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Corphita

USA . 1,297 parts In-Stock

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Argo Parts USA

USA . 1,205 parts In-Stock

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$0.171

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$0.166

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$0.171

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Continental Prestige Electronics

USA . 5,375 parts In-Stock

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$0.303

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$0.214

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$0.134

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$0.102

5,375

$0.303

$0.214

$0.134

$0.102

Aztec Data Supply Inc.

USA . 4,698 parts In-Stock

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$1.797

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$1.797

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Glotronic Ltd.

UK . 69,600 parts In-Stock

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RC Electronics

USA . 56,034 parts In-Stock

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$0.180

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$0.170

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Perfect Parts

USA . 48,021 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 13,531 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 5,245 parts In-Stock

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SupplyDigital Components

Austria . 1,201 parts In-Stock

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UHIMA Technologies

Türkiye . 802 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.168

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$0.159

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Kulean Microsystems

USA . 451 parts In-Stock

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TANS Electronics

Latvia . 380 parts In-Stock

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GreenTree Electronics

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Overview

Boost your electronics projects with the NST45011MW6T1G NPN transistor by Onsemi. This small signal BJT offers high-quality performance and reliability, making it ideal for amplifier applications. With its compact size and surface mount capability, this transistor is easy to integrate into your designs. Benefit from a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200, ensuring efficient power management. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-notch components that meet your needs. Elevate your projects with the NST45011MW6T1G and experience unparalleled performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor durable and resistant to environmental factors, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SEPARATE, 2 ELEMENTS

The separate, 2 elements configuration allows for versatile usage in different circuit designs, providing flexibility in circuit layout and optimization.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides reliable and efficient amplification of signals.

Surface Mount: YES

Surface mount capability enables easy and convenient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape facilitates compact and space-efficient circuit designs, ideal for applications with limited space.

Maximum Power Dissipation (Abs): 0.38 W

With a high maximum power dissipation rating, this transistor can handle higher power levels without overheating or failure.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to function reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides a safe operating margin for voltage spikes or fluctuations in the circuit.

Transistor Element Material: SILICON

Silicon material offers high performance characteristics such as low noise, high frequency response, and reliability, making it a suitable choice for amplification applications.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating allows the transistor to handle higher current loads, ensuring robust performance in various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections during assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and connection options, allowing for easy integration into different circuit designs.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates good high-frequency performance, making this transistor suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST45011MW6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NST45011MW6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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