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NST489AMT1G

Onsemi

NST489AMT1G by Onsemi

NST489AMT1G by Onsemi is a NPN BJT transistor for switching applications. With hFE of 200, it can handle IC up to 2A and VCE of 30V. Operating at 150°C max temp, it has fT of 300MHz making it suitable for high-frequency circuits.

Median Price

$0.269

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9,000 parts In-Stock

1+ parts

$0.274

100+ parts

$0.222

1k+ parts

$0.193

10k+ parts

$0.172

9,000

$0.274

$0.222

$0.193

$0.172

Mouser Electronics

USA . 4,889 parts In-Stock

1+ parts

$0.980

100+ parts

$0.300

1k+ parts

$0.234

10k+ parts

$0.204

4,889

$0.980

$0.300

$0.234

$0.204

DigiKey

USA . 3,898 parts In-Stock

1+ parts

$0.980

100+ parts

$0.396

1k+ parts

$0.275

10k+ parts

-

3,898

$0.980

$0.396

$0.275

-

Rochester

USA . 74,633 parts In-Stock

1+ parts

-

100+ parts

$0.243

1k+ parts

$0.202

10k+ parts

$0.180

74,633

-

$0.243

$0.202

$0.180

Verical

USA . 65,997 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.225

65,997

-

-

-

$0.225

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

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15,000

-

-

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Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.204

10k+ parts

$0.190

6,000

-

$0.264

$0.204

$0.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,663 parts In-Stock

1+ parts

$0.163

100+ parts

-

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1,663

$0.163

-

-

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.258

100+ parts

-

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650

$0.258

-

-

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.525

100+ parts

$0.194

1k+ parts

$0.137

10k+ parts

-

3,000

$0.525

$0.194

$0.137

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Chip Stock

USA . 52,000 parts In-Stock

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52,000

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Vyrian

USA . 31,164 parts In-Stock

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31,164

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Flip Electronics

USA . 15,000 parts In-Stock

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15,000

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

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3,000

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Dan-Mar Components

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Cyclops Electronics Ltd

UK . 2,992 parts In-Stock

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2,992

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 31,061 parts In-Stock

1+ parts

$0.146

100+ parts

-

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31,061

$0.146

-

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Corphita

USA . 2,079 parts In-Stock

1+ parts

$0.155

100+ parts

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2,079

$0.155

-

-

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Semicontronic

India . 31,318 parts In-Stock

1+ parts

$0.169

100+ parts

$0.165

1k+ parts

$0.164

10k+ parts

-

31,318

$0.169

$0.165

$0.164

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Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.172

100+ parts

-

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280

$0.172

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Argo Parts USA

USA . 3,053 parts In-Stock

1+ parts

$0.258

100+ parts

-

1k+ parts

-

10k+ parts

$0.250

3,053

$0.258

-

-

$0.250

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.258

100+ parts

-

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2,000

$0.258

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Aztec Data Supply Inc.

USA . 3,265 parts In-Stock

1+ parts

$1.112

100+ parts

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3,265

$1.112

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Continental Prestige Electronics

USA . 71,633 parts In-Stock

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$0.250

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71,633

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$0.250

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Lixinc

USA . 19,262 parts In-Stock

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19,262

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Kepictronics

USA . 9,000 parts In-Stock

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Perfect Parts

USA . 7,346 parts In-Stock

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7,346

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Kulean Microsystems

USA . 5,614 parts In-Stock

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5,614

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 3,898 parts In-Stock

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3,898

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Problanco Electronics

Mexico . 3,776 parts In-Stock

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3,776

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,986 parts In-Stock

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2,986

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TANS Electronics

Latvia . 2,919 parts In-Stock

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2,919

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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957

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Resion (Excess)

USA . 50 parts In-Stock

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50

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Overview

Discover the NST489AMT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Crafted with precision and expertise by Onsemi, this NPN transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 30V and a DC current gain of 200, this transistor provides efficient power dissipation and optimal functionality. Whether you're designing electronics for automotive, industrial, or consumer applications, the NST489AMT1G delivers exceptional value, performance, and benefits to meet your needs. Trust Onsemi for superior quality and innovation in transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body makes this transistor lightweight and cost-effective compared to other materials.

Polarity or Channel Type: NPN

The NPN polarity type allows for easy integration into existing circuit designs and compatibility with commonly used components.

Configuration: SINGLE

The single configuration simplifies circuit layout and reduces the overall size of the design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient operation.

Surface Mount: YES

Being surface mountable makes this transistor suitable for automated assembly processes, saving time and reducing assembly costs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easier mounting and placement in tight spaces.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and reliable connection, ensuring stable performance in various applications.

No. of Terminals: 6

With six terminals, this transistor offers flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 1.75 W

The high maximum power dissipation rating allows for reliable operation under heavy loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures consistent and stable amplification in various circuit setups.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions without sacrificing performance.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating provides a wide range of voltage handling capabilities for different applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability and long-term stability in operation.

Maximum Collector Current (IC): 2 A

With a high maximum collector current rating, this transistor can handle high current loads without risking damage.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures low contact resistance and long-term reliability in various operating environments.

Terminal Position: DUAL

The dual terminal position allows for multiple connection options, enhancing flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of damage during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures reliable and stable connections during soldering.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency, this transistor provides fast switching speeds and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST489AMT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NST489AMT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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