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NSCT3904LT3G

Onsemi

NSCT3904LT3G by Onsemi

NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 69,000 parts In-Stock

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Vyrian

USA . 9,633 parts In-Stock

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Digiode

USA . 1,990 parts In-Stock

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1,990

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AZTECH Wire

Italy . 849 parts In-Stock

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$16.570

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Component Stockers USA

USA . 355 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,379 parts In-Stock

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Kulean Microsystems

USA . 4,388 parts In-Stock

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TANS Electronics

Latvia . 4,366 parts In-Stock

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SupplyDigital Components

Austria . 2,049 parts In-Stock

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Corphita

USA . 1,527 parts In-Stock

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UHIMA Technologies

Türkiye . 905 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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Overview

Enhance your electronic designs with the reliable NSCT3904LT3G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in their small signal bipolar junction transistors. Ideal for a wide range of applications, this NPN transistor offers customers exceptional value, efficiency, and versatility. With a low VCEsat of 0.3V and a high DC current gain of 30, the NSCT3904LT3G delivers superior results while operating at temperatures up to 150 °C. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and well understood, making them easy to work with in electronic circuits.

Configuration: SINGLE

Simplifies circuit design by avoiding the complexities of multiple transistors in parallel or series.

Maximum VCEsat: 0.3 V

Low VCEsat helps in minimizing power loss and improving efficiency in the circuit.

Package Shape: RECTANGULAR

Compact and convenient shape for installation and mounting in various electronic devices.

Terminal Form: GULL WING

Gull wing terminals are suitable for surface mount applications, ensuring secure and reliable connections.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power dissipation levels without getting overheated, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Small outline package makes it suitable for compact designs and space-constrained applications.

Minimum DC Current Gain (hFE): 30

A high hFE value ensures consistent and predictable amplification characteristics in the transistor.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, making it suitable for diverse environmental conditions.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance helps in high-frequency applications by reducing signal distortion.

Transistor Element Material: SILICON

Silicon transistors offer good performance, reliability, and compatibility with modern semiconductor technology.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient switching and amplification in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSCT3904LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.3 V

Trade Compliance

NSCT3904LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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