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NSCT3904LT1G

Onsemi

NSCT3904LT1G by Onsemi

NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

12,000

-

$0.030

$0.025

$0.023

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

12,000

-

-

-

$0.038

Distributors (In-Stock)

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Digiode

USA . 1,708 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,708

$0.024

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Semi Source

USA . 60,000 parts In-Stock

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60,000

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Chip Stock

USA . 45,000 parts In-Stock

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45,000

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Vyrian

USA . 7,329 parts In-Stock

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7,329

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Distributors (Availability)

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Corphita

USA . 1,787 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,787

$0.022

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Corohmni

South Africa . 312 parts In-Stock

1+ parts

$0.025

100+ parts

-

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312

$0.025

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AZTECH Wire

Italy . 702 parts In-Stock

1+ parts

$14.020

100+ parts

-

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702

$14.020

-

-

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A-Z Elektronik GmbH

Germany . 7,307 parts In-Stock

1+ parts

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7,307

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Problanco Electronics

Mexico . 4,473 parts In-Stock

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4,473

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TANS Electronics

Latvia . 3,787 parts In-Stock

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3,787

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Kulean Microsystems

USA . 3,752 parts In-Stock

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3,752

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SupplyDigital Components

Austria . 3,009 parts In-Stock

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3,009

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ChipstoGo Electronic ltd

UK . 2,440 parts In-Stock

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2,440

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UHIMA Technologies

Türkiye . 679 parts In-Stock

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679

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Overview

Unlock the potential of your electronic devices with the NSCT3904LT1G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is designed for high-performance applications, offering customers exceptional value and benefits. With its NPN configuration and low VCEsat, this transistor provides superior efficiency and power dissipation. Whether you're working on amplifiers, oscillators, or signal processing circuits, the NSCT3904LT1G is the perfect solution to enhance your projects. Experience the advantages of Onsemi's innovative technology with this versatile and reliable component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Offers versatility and compatibility with NPN circuit designs.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Surface Mount: YES

Facilitates easy mounting on PCBs, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low VCEsat ensures efficient switching and minimal power loss.

Package Shape: RECTANGULAR

Optimal design for space-saving on PCB layouts.

Terminal Form: GULL WING

Enhances solder joint strength and reliability during assembly.

No. of Terminals: 3

Simple pin configuration for easy handling and connection in circuits.

Maximum Power Dissipation (Abs): 0.3 W

Sufficient power handling capability for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package style ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 30

Ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high-temperature environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance ensures minimal signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 40 V

Supports a wide range of voltage requirements in circuits.

Transistor Element Material: SILICON

Provides stable and predictable performance over a wide temperature range.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time for quick switching applications.

Minimum Operating Temperature: -55 °C

Suitable for operation in cold environments without performance degradation.

Maximum Collector Current (IC): 0.2 A

Adequate current handling capability for various circuit requirements.

Maximum Turn Off Time (toff): 250 ns

Fast turn-off time for efficient switching and minimal overlap in switching operations.

Terminal Finish: MATTE TIN

Ensures good solderability and long-term reliability of connections.

Terminal Position: DUAL

Easy and versatile mounting options in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable reflow time for reliable solder joints during assembly.

Peak Reflow Temperature °C: 260

Optimal temperature for proper solder reflow without damaging the component.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for fast response and signal processing in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSCT3904LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.3 V

Trade Compliance

NSCT3904LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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