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2SA1020RLRAG

Onsemi

2SA1020RLRAG by Onsemi

2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.

Median Price

$0.195

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 46,729 parts In-Stock

1+ parts

$0.182

100+ parts

$0.171

1k+ parts

$0.155

10k+ parts

-

46,729

$0.182

$0.171

$0.155

-

Chip1Stop

Japan . 3,887 parts In-Stock

1+ parts

$1.160

100+ parts

$0.359

1k+ parts

$0.207

10k+ parts

-

3,887

$1.160

$0.359

$0.207

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Farnell

UK . 41,940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.193

41,940

-

-

-

$0.193

DigiKey

USA . 41,176 parts In-Stock

1+ parts

-

100+ parts

-

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$0.260

41,176

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-

-

$0.260

Verical

USA . 27,128 parts In-Stock

1+ parts

-

100+ parts

-

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$0.195

27,128

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-

$0.195

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 315 parts In-Stock

1+ parts

$0.164

100+ parts

-

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315

$0.164

-

-

-

Chip Stock

USA . 48,000 parts In-Stock

1+ parts

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48,000

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DigiKey Marketplace

USA . 45,940 parts In-Stock

1+ parts

-

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45,940

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Vyrian

USA . 7,331 parts In-Stock

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7,331

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,651 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

-

1,651

$0.156

-

-

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Corohmni

South Africa . 114 parts In-Stock

1+ parts

$0.162

100+ parts

-

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114

$0.162

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-

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Native Components

USA . 494 parts In-Stock

1+ parts

$1.385

100+ parts

-

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494

$1.385

-

-

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Northwest PG Solutions

USA . 1,909 parts In-Stock

1+ parts

$1.523

100+ parts

-

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1,909

$1.523

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AZTECH Wire

Italy . 612 parts In-Stock

1+ parts

$17.600

100+ parts

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612

$17.600

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Perfect Parts

USA . 47,920 parts In-Stock

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47,920

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Continental Prestige Electronics

USA . 45,940 parts In-Stock

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$0.157

10k+ parts

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45,940

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$0.157

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QUARKTWIN TECHNOLOGY LTD

USA . 10,985 parts In-Stock

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10,985

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TANS Electronics

Latvia . 7,821 parts In-Stock

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7,821

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Problanco Electronics

Mexico . 7,609 parts In-Stock

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7,609

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SupplyDigital Components

Austria . 5,602 parts In-Stock

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5,602

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Kepictronics

USA . 4,606 parts In-Stock

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4,606

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Kulean Microsystems

USA . 4,513 parts In-Stock

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4,513

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Authorized Procurement Solutions

USA . 4,431 parts In-Stock

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4,431

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GreenTree Electronics

Israel . 3,931 parts In-Stock

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3,931

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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596

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ChipstoGo Electronic ltd

UK . 84 parts In-Stock

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84

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Overview

Discover the power of reliable and high-quality performance with the 2SA1020RLRAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers excellence in Small Signal Bipolar Junction Transistors, offering customers unparalleled value and benefits. With its PNP configuration and maximum collector current of 2A, this transistor is ideal for a wide range of applications. Trust Onsemi to provide top-notch products that meet your needs and exceed your expectations. Elevate your projects with the 2SA1020RLRAG and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplifies circuit design and troubleshooting with a single transistor.

Maximum Power Dissipation (Abs): 1.5 W

Handles higher power loads without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring higher voltage capabilities.

Nominal Transition Frequency (fT): 100 MHz

Enables high-frequency signal amplification and switching performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1020RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1020RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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