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MPS8098RLRAG

Onsemi

MPS8098RLRAG by Onsemi

MPS8098RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 0.625W, hFE of 75, and max operating temp of 150 °C. With a max collector-emitter voltage of 60V and max collector current of 0.5A, it's suitable for various electronic circuits.

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1k+

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Vyrian

USA . 3,145 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 363 parts In-Stock

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$13.700

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QUARKTWIN TECHNOLOGY LTD

USA . 28,362 parts In-Stock

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

Austria . 2,240 parts In-Stock

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Corphita

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Corohmni

South Africa . 341 parts In-Stock

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UHIMA Technologies

Türkiye . 113 parts In-Stock

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Kulean Microsystems

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Overview

Enhance your amplifier projects with the high-quality MPS8098RLRAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient small signal bipolar junction transistors that are perfect for various applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 75, this NPN transistor offers exceptional performance and durability. Whether you're working on audio amplifiers or signal processing circuits, the MPS8098RLRAG provides the value, benefits, and advantages you need to take your projects to the next level. Trust Onsemi for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and protection, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

The round shape of the package allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during circuit assembly.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle heat effectively, ensuring stable performance under load.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and compact size for versatile mounting options.

Minimum DC Current Gain (hFE): 75

A minimum DC current gain of 75 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and extended operation.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating ensures safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and superior reliability for various electronic applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate to high current loads with ease.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides excellent conductivity, corrosion resistance, and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier mounting and wiring in circuit boards or electronic assemblies.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures robust solder joints and reliable connections during assembly processes.

Nominal Transition Frequency (fT): 150 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies with minimal signal distortion, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8098RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8098RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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