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MMSTA06-7

Diodes Incorporated

MMSTA06-7 by Diodes Incorporated

Diodes Inc.'s MMSTA06-7 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150°C with fT of 100MHz. Its small outline package makes it suitable for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 870 parts In-Stock

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870

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Vyrian

USA . 17,550 parts In-Stock

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17,550

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Corohmni

South Africa . 1,027 parts In-Stock

1+ parts

$1.202

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1,027

$1.202

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Aztec Data Supply Inc.

USA . 88 parts In-Stock

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$1.284

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88

$1.284

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Ampacity Inc.

Singapore . 471 parts In-Stock

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$3.050

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471

$3.050

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AZTECH Wire

Italy . 840 parts In-Stock

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$11.736

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840

$11.736

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QUARKTWIN TECHNOLOGY LTD

USA . 19,575 parts In-Stock

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19,575

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Continental Prestige Electronics

USA . 4,785 parts In-Stock

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4,785

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Argo Parts USA

USA . 4,528 parts In-Stock

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4,528

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Advanced Electronics

New Zealand . 870 parts In-Stock

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870

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Aranea Global

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 4 parts In-Stock

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Overview

Unlock the power of innovation with the MMSTA06-7 by Diodes Incorporated. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 80V and a nominal transition frequency of 100 MHz, this NPN transistor is designed to exceed expectations. Experience seamless integration with its gull wing terminal form and compact rectangular package shape. Elevate your projects with the quality and reliability that only Diodes Incorporated can deliver. Choose the MMSTA06-7 for exceptional value and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications

Polarity or Channel Type: NPN

Commonly used in electronic circuits, ensuring compatibility with a wide range of components

Configuration: SINGLE

Simplified setup and circuit design

Transistor Application: SWITCHING

Ideal for applications where rapid switching is required

Surface Mount: YES

Easily mountable on circuit boards, saving space and facilitating automated assembly

Package Shape: RECTANGULAR

Easy to handle and integrate into circuits

Terminal Form: GULL WING

Facilitates easy soldering and ensures secure connections

No. of Terminals: 3

Simplifies circuit connections

Package Style (Meter): SMALL OUTLINE

Space-efficient design for compact electronic devices

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification of signals

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of environmental conditions

Maximum Collector-Emitter Voltage: 80 V

Handles moderate voltage levels, suitable for various applications

Transistor Element Material: SILICON

Provides high performance and reliability

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels in circuit applications

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability

Terminal Position: DUAL

Facilitates easy and efficient connection in circuits

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, providing good signal response

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMSTA06-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMSTA06-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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