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MMST3904-7-F

Diodes Incorporated

MMST3904-7-F by Diodes Incorporated

Diodes Inc. MMST3904-7-F is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Features GULL WING terminals in a SMALL OUTLINE package.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,005 parts In-Stock

1+ parts

$0.300

100+ parts

$0.095

1k+ parts

$0.061

10k+ parts

$0.047

2,005

$0.300

$0.095

$0.061

$0.047

Farnell

UK . 4,779 parts In-Stock

1+ parts

-

100+ parts

$0.073

1k+ parts

$0.045

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$0.032

4,779

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$0.073

$0.045

$0.032

Arrow

USA . 2,609 parts In-Stock

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2,609

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Verical

USA . 2,609 parts In-Stock

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2,609

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$0.019

Element14

Singapore . 1,874 parts In-Stock

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$0.083

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$0.042

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$0.038

1,874

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$0.038

Newark

USA . 410 parts In-Stock

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$0.121

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$0.081

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410

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$0.121

$0.081

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Distributors (In-Stock)

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Freelance Electronics

USA . 1 parts In-Stock

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$0.020

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1

$0.020

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Nova Conductors

Japan . 750 parts In-Stock

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$0.077

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750

$0.077

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Vyrian

USA . 1,553,929 parts In-Stock

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NAC Semi

USA . 66,000 parts In-Stock

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Chip Stock

USA . 43,000 parts In-Stock

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Bristol Electronics

USA . 19,656 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 14,937 parts In-Stock

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Atlantic Semiconductor

USA . 12,000 parts In-Stock

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Dan-Mar Components

USA . 8,804 parts In-Stock

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Diverse Electronics

Canada . 6,000 parts In-Stock

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Prism Electronics

USA . 3,624 parts In-Stock

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Inventory MP

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.035

3,000

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$0.035

EPE Components Inc.

USA . 2,213 parts In-Stock

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2,213

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EMSNET

USA . 857 parts In-Stock

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Beltway Electronics Company

USA . 345 parts In-Stock

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345

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Speed Components Ltd

Israel . 300 parts In-Stock

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300

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Distributors (Availability)

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Semicontronic

India . 1,706,588 parts In-Stock

1+ parts

$0.017

100+ parts

$0.017

1k+ parts

$0.016

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1,706,588

$0.017

$0.017

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Ampacity Inc.

Singapore . 1,917,644 parts In-Stock

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$0.018

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.075

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$0.072

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1,000

$0.075

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Argo Parts USA

USA . 3,603 parts In-Stock

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$0.077

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3,603

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Aztec Data Supply Inc.

USA . 277 parts In-Stock

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$0.451

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277

$0.451

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Modulus Dynamics

Lithuania . 23,578 parts In-Stock

1+ parts

$1.694

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$1.694

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$1.694

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23,578

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$1.694

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Corohmni

South Africa . 502 parts In-Stock

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$1.711

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$1.711

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

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RC Electronics

USA . 142,219 parts In-Stock

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$0.060

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$0.060

Perfect Parts

USA . 82,732 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,931 parts In-Stock

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Kepictronics

USA . 21,000 parts In-Stock

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iodParts Technologies Inc.

India . 15,100 parts In-Stock

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Robosynatics

Brazil . 10,961 parts In-Stock

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$1.932

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$1.892

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$1.892

10,961

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$1.932

$1.892

$1.892

Lucentia Tech

USA . 10,961 parts In-Stock

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$1.932

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$1.892

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$1.892

10,961

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$1.892

$1.892

Continental Prestige Electronics

USA . 10,334 parts In-Stock

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$0.068

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$0.046

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$0.029

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$0.029

Lixinc

USA . 6,641 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 2,824 parts In-Stock

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Futuretech Components

Singapore . 956 parts In-Stock

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Overview

Enhance your electronic designs with the MMST3904-7-F by Diodes Incorporated. Manufactured with top-notch quality and precision, this Small Signal Bipolar Junction Transistor (BJT) offers a myriad of applications for your projects. With its NPN polarity, Gull Wing terminal form, and high DC current gain, this transistor provides exceptional performance and reliability. Whether you're working on amplifiers, signal processing circuits, or voltage regulators, the MMST3904-7-F delivers unparalleled value, efficiency, and versatility to meet all your needs. Trust in Diodes Incorporated for superior products that elevate your projects to new heights.

Feature Benefit Bullets

Package Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for different circuit designs.

Maximum Power Dissipation: 0.2 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain: 30

The high DC current gain ensures efficient amplification of signals in the circuit.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage levels.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any risk of damage, making it suitable for demanding environments.

Nominal Transition Frequency: 300 MHz

The high transition frequency allows for fast response times in amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST3904-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMST3904-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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