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MMST5551-7-F

Diodes Incorporated

MMST5551-7-F by Diodes Incorporated

Diodes Inc.'s MMST5551-7-F is a NPN BJT transistor with 160V VCEO, 0.2A IC, and 30 hFE. Ideal for switching applications, it has a small outline package with Gull Wing terminals and operates up to 150°C. Suitable for surface mount assembly, it offers a transition frequency of 100MHz.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,590 parts In-Stock

1+ parts

$0.390

100+ parts

$0.148

1k+ parts

$0.095

10k+ parts

-

1,590

$0.390

$0.148

$0.095

-

Arrow

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.022

24,000

-

-

-

$0.022

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

15,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.068

-

-

-

TME

Poland . 1,202 parts In-Stock

1+ parts

$0.290

100+ parts

$0.117

1k+ parts

$0.067

10k+ parts

$0.056

1,202

$0.290

$0.117

$0.067

$0.056

Vyrian

USA . 67,781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

67,781

-

-

-

-

Chip Stock

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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64,000

-

-

-

-

IBS Electronics

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

54,000

-

-

-

$0.071

Rutronik

Germany . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.048

33,000

-

-

-

$0.048

Bristol Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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12,000

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

6,000

-

-

-

$0.113

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 93,106 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

-

10k+ parts

-

93,106

$0.020

-

-

-

Argo Parts USA

USA . 2,384 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

2,384

$0.068

-

-

$0.066

Continental Prestige Electronics

USA . 1,051 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

1,051

$0.068

-

-

$0.067

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.068

-

-

-

Component Stockers USA

USA . 105,629 parts In-Stock

1+ parts

$0.200

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.020

105,629

$0.200

$0.040

$0.040

$0.020

Perfect Parts

USA . 715,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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715,086

-

-

-

-

Authorized Procurement Solutions

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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40,000

-

-

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Glotronic Ltd.

UK . 26,400 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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26,400

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-

-

-

Kepictronics

USA . 21,298 parts In-Stock

1+ parts

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100+ parts

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21,298

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-

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-

Lixinc

USA . 7,155 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,155

-

-

-

-

Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,000

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Overview

Discover the power of the MMST5551-7-F by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a single NPN configuration and a maximum collector-emitter voltage of 160V, this transistor offers reliable performance in a compact package. Ideal for a wide range of electronic projects, the MMST5551-7-F provides customers with superior value, efficiency, and versatility. Trust Diodes Incorporated for innovative solutions that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, extending its lifespan.

Polarity or Channel Type: NPN

Commonly used in switching applications, making it versatile for a variety of circuit designs.

Configuration: SINGLE

Simplified circuit design and ease of use.

Transistor Application: SWITCHING

Optimized for quick switching operations, suitable for a wide range of electronic devices.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Efficient use of space on the PCB, allowing for compact designs.

Terminal Form: GULL WING

Provides strong mechanical support and helps to prevent solder joint cracks.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Offers a wide temperature range, suitable for a variety of environmental conditions.

Maximum Collector-Emitter Voltage: 160 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides good electrical performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.2 A

Can handle moderate current levels for switching applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Allows for easy connection to the circuit and stable mounting on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe operation during solder reflow processes.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 100 MHz

Offers fast response and high frequency operation for switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST5551-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMST5551-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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