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MMST2222A-7-F

Diodes Incorporated

MMST2222A-7-F by Diodes Incorporated

Diodes Inc.'s MMST2222A-7-F is a NPN BJT with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its compact SOT-23 package and high transition frequency. Offers fast switching times of 35ns (ton) and 285ns (toff), making it suitable for various circuit designs.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,630 parts In-Stock

1+ parts

$0.181

100+ parts

$0.063

1k+ parts

$0.046

10k+ parts

-

3,630

$0.181

$0.063

$0.046

-

DigiKey

USA . 47,931 parts In-Stock

1+ parts

$0.220

100+ parts

$0.085

1k+ parts

$0.055

10k+ parts

-

47,931

$0.220

$0.085

$0.055

-

Mouser Electronics

USA . 9,925 parts In-Stock

1+ parts

$0.220

100+ parts

$0.085

1k+ parts

$0.063

10k+ parts

$0.049

9,925

$0.220

$0.085

$0.063

$0.049

Arrow

USA . 6,000 parts In-Stock

1+ parts

$0.224

100+ parts

$0.087

1k+ parts

$0.056

10k+ parts

$0.039

6,000

$0.224

$0.087

$0.056

$0.039

Verical

USA . 1,449,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.025

1,449,000

-

-

-

$0.025

Avnet

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.019

6,000

-

-

-

$0.019

Farnell

UK . 2,130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.026

10k+ parts

$0.022

2,130

-

-

$0.026

$0.022

Element14

Singapore . 2,130 parts In-Stock

1+ parts

-

100+ parts

$0.084

1k+ parts

$0.046

10k+ parts

$0.039

2,130

-

$0.084

$0.046

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

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700

$0.046

-

-

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Vyrian

USA . 1,231,139 parts In-Stock

1+ parts

-

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1,231,139

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Cyclops Electronics Ltd

UK . 215,040 parts In-Stock

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215,040

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Chip Stock

USA . 71,000 parts In-Stock

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71,000

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ACDS - Activité Composants Distribution Service

France . 1,170 parts In-Stock

1+ parts

-

100+ parts

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1,170

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-

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Bristol Electronics

USA . 1,170 parts In-Stock

1+ parts

-

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1,170

-

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Dan-Mar Components

USA . 1,170 parts In-Stock

1+ parts

-

100+ parts

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1,170

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Speed Components Ltd

Israel . 786 parts In-Stock

1+ parts

-

100+ parts

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786

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PC Components Company LLC

USA . 609 parts In-Stock

1+ parts

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100+ parts

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609

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Component Sense

UK . 495 parts In-Stock

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495

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,732,246 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

-

10k+ parts

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1,732,246

$0.017

-

-

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Argo Parts USA

USA . 2,562 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

$0.045

2,562

$0.046

-

-

$0.045

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.046

100+ parts

-

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10k+ parts

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2,000

$0.046

-

-

-

Continental Prestige Electronics

USA . 8,815 parts In-Stock

1+ parts

$0.137

100+ parts

$0.042

1k+ parts

$0.029

10k+ parts

$0.019

8,815

$0.137

$0.042

$0.029

$0.019

Aztec Data Supply Inc.

USA . 81 parts In-Stock

1+ parts

$0.400

100+ parts

-

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81

$0.400

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

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Perfect Parts

USA . 127,261 parts In-Stock

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127,261

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CPlus Electronics

USA . 60,000 parts In-Stock

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60,000

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QUARKTWIN TECHNOLOGY LTD

USA . 20,772 parts In-Stock

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20,772

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Lixinc

USA . 14,404 parts In-Stock

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14,404

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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6,000

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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Speed Components Ltd (Excess)

Israel . 65 parts In-Stock

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65

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Overview

Unleash the power of innovation with the MMST2222A-7-F by Diodes Incorporated! This high-quality, small signal bipolar junction transistor (BJT) offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. With its NPN polarity, single configuration, and gull wing terminals, this transistor is designed to deliver exceptional results. Whether you're working on electronics projects or industrial applications, the MMST2222A-7-F provides the value, benefits, and advantages you need to bring your ideas to life. Upgrade to Diodes Incorporated and experience the difference today!

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

This material is lightweight, cost-effective, and provides good insulation for the transistor components.

Polarity or Channel Type : NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Maximum Power Dissipation (Abs) : 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature : 150 °C

This transistor can operate reliably in a wide range of temperatures up to 150°C, suitable for various environments.

Maximum Collector-Emitter Voltage : 40 V

The high maximum voltage rating of 40V allows this transistor to be used in circuits with higher voltage requirements.

Nominal Transition Frequency (fT) : 300 MHz

This high transition frequency enables the transistor to operate at higher frequencies, ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST2222A-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMST2222A-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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