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MMSTA56-7-F

Diodes Incorporated

MMSTA56-7-F by Diodes Incorporated

Diodes Inc. MMSTA56-7-F is a PNP BJT transistor for switching applications. Features include hFE of 100, VCEO of 80V, and IC of 0.5A. With a max power dissipation of 0.2W, it operates up to 150°C and has an fT of 50MHz.

Median Price

$0.231

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 47,182 parts In-Stock

1+ parts

$0.410

100+ parts

$0.158

1k+ parts

$0.104

10k+ parts

$0.087

47,182

$0.410

$0.158

$0.104

$0.087

DigiKey

USA . 2,612 parts In-Stock

1+ parts

$0.410

100+ parts

$0.157

1k+ parts

$0.104

10k+ parts

-

2,612

$0.410

$0.157

$0.104

-

Arrow

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

36,000

-

-

-

$0.052

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

36,000

-

-

-

$0.052

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$0.103

-

-

-

Bristol Electronics

USA . 1,415 parts In-Stock

1+ parts

$0.306

100+ parts

$0.153

1k+ parts

$0.061

10k+ parts

-

1,415

$0.306

$0.153

$0.061

-

Vyrian

USA . 167,494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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167,494

-

-

-

-

NAC Semi

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

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96,000

-

-

-

-

Chip Stock

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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39,000

-

-

-

-

IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

12,000

-

-

-

$0.044

ACDS - Activité Composants Distribution Service

France . 1,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,415

-

-

-

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Dan-Mar Components

USA . 1,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,415

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 183,281 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

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183,281

$0.043

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

$0.097

10k+ parts

-

1,000

$0.101

-

$0.097

-

Argo Parts USA

USA . 4,789 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

4,789

$0.103

-

-

$0.100

Continental Prestige Electronics

USA . 2,162 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

2,162

$0.103

-

-

$0.101

Component Stockers USA

USA . 132,022 parts In-Stock

1+ parts

$0.440

100+ parts

$0.160

1k+ parts

$0.090

10k+ parts

$0.040

132,022

$0.440

$0.160

$0.090

$0.040

Perfect Parts

USA . 190,700 parts In-Stock

1+ parts

-

100+ parts

-

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190,700

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-

-

-

Eastek

USA . 27,000 parts In-Stock

1+ parts

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27,000

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Kepictronics

USA . 24,277 parts In-Stock

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24,277

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GreenTree Electronics

Israel . 24,000 parts In-Stock

1+ parts

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24,000

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-

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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7,000

-

-

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Glotronic Ltd.

UK . 1,740 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,740

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-

-

-

Overview

Discover the superior quality and reliability of the MMSTA56-7-F by Diodes Incorporated, a leading manufacturer in small signal bipolar junction transistors. This PNP transistor is perfect for switching applications, offering high performance in a compact package. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 80V, this transistor provides exceptional value and efficiency for your electronic projects. Trust Diodes Incorporated to deliver the innovation and excellence you need for your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good protection to the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration in circuits where PNP transistors are required, enabling compatibility with existing designs.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to incorporate this transistor into a circuit.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently and effectively control the flow of current, making it suitable for a wide range of switching tasks.

Surface Mount: YES

Being surface mountable, this transistor is easy to mount and solder onto circuit boards, saving space and making assembly more efficient.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures stable and consistent amplification in various circuit configurations, making it versatile for different applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80V allows this transistor to handle higher voltages, increasing its versatility for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels, making it suitable for many switching and amplification tasks.

Nominal Transition Frequency (fT): 50 MHz

The nominal transition frequency of 50MHz indicates that this transistor can switch or amplify signals up to 50MHz, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMSTA56-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMSTA56-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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