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MMST2222A

Diodes Incorporated

MMST2222A by Diodes Incorporated

MMST2222A by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 100, and max IC of 0.6A. It operates up to 150°C, has VCE of 40V, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size and high transition frequency.

Median Price

$0.063

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 2,144 parts In-Stock

1+ parts

$0.026

100+ parts

$0.164

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$0.155

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2,144

$0.026

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$0.155

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Ace Electronics

USA . 2,900 parts In-Stock

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$0.100

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$0.100

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Standard Data Resources

USA . 30,000 parts In-Stock

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Q Components

USA . 9,000 parts In-Stock

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EMSNET

USA . 6,579 parts In-Stock

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6,579

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A2Z Electronics, Inc.

USA . 6,000 parts In-Stock

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Connector Distribution Corp

USA . 4,807 parts In-Stock

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4,807

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Right Parts Inc.

USA . 4,807 parts In-Stock

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Electronic Expediters

USA . 3,342 parts In-Stock

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SPM Sales

USA . 2,800 parts In-Stock

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Resion

USA . 2,287 parts In-Stock

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MISTER SPROCKETS

USA . 2,000 parts In-Stock

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PC Components Company LLC

USA . 1,200 parts In-Stock

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Bristol Electronics

USA . 1,200 parts In-Stock

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R&J Components

USA . 735 parts In-Stock

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Vyrian

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407

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Nova Conductors

Japan . 150 parts In-Stock

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Prism Electronics

USA . 23 parts In-Stock

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AZTECH Wire

Italy . 407 parts In-Stock

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$5.180

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407

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 14,823 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Kepictronics

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Continental Prestige Electronics

USA . 4,220 parts In-Stock

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Perfect Parts

USA . 2,798 parts In-Stock

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Argo Parts USA

USA . 1,707 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Upgrade your electronics with the MMST2222A from Diodes Incorporated, a leading manufacturer known for high-quality components. This Small Signal Bipolar Junction Transistor (BJT) offers reliability and versatility in a compact package, perfect for a wide range of applications. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 100, this NPN transistor delivers exceptional performance. Experience the value and benefits of this product, whether you're designing consumer electronics or industrial equipment. Trust Diodes Incorporated to provide the advanced technology you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels, suitable for a variety of applications.

Package Shape: RECTANGULAR

Space-saving design for compact electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering during assembly.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Collector-Emitter Voltage: 40 V

Allows for compatibility with a range of voltage levels in circuits.

Nominal Transition Frequency (fT): 300 MHz

High frequency capability for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST2222A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMST2222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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