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MMSTA42-7-F

Diodes Incorporated

MMSTA42-7-F by Diodes Incorporated

MMSTA42-7-F by Diodes Inc. is a NPN BJT transistor with 300V VCEO, 0.2A IC, and 40 min hFE. Ideal for switching applications, it has a max operating temp of 150°C and fT of 50MHz. This small outline package with gull wing terminals is surface mountable for efficient PCB design.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 95,730 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.085

10k+ parts

-

95,730

$0.340

$0.130

$0.085

-

Mouser Electronics

USA . 13,718 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.086

10k+ parts

-

13,718

$0.340

$0.130

$0.086

-

Verical

USA . 1,555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.009

1,555

-

-

-

$0.009

Arrow

USA . 1,555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.009

1,555

-

-

-

$0.009

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

22

$0.064

-

-

-

Maritex

Poland . 2,653 parts In-Stock

1+ parts

$0.107

100+ parts

$0.057

1k+ parts

$0.054

10k+ parts

$0.049

2,653

$0.107

$0.057

$0.054

$0.049

Vyrian

USA . 155,183 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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155,183

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-

-

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Chip Stock

USA . 16,000 parts In-Stock

1+ parts

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16,000

-

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Cyclops Electronics Ltd

UK . 11,212 parts In-Stock

1+ parts

-

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11,212

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-

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Bristol Electronics

USA . 2,835 parts In-Stock

1+ parts

-

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2,835

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Distributors (Availability)

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Ampacity Inc.

Singapore . 154,945 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

-

10k+ parts

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154,945

$0.020

-

-

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Argo Parts USA

USA . 2,432 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

2,432

$0.064

-

-

$0.062

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.064

100+ parts

$0.063

1k+ parts

-

10k+ parts

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2,000

$0.064

$0.063

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Corohmni

South Africa . 310 parts In-Stock

1+ parts

$1.938

100+ parts

-

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10k+ parts

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310

$1.938

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Infinite Electronics LLP (Excess)

. 36,285 parts In-Stock

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36,285

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Kepictronics

USA . 24,335 parts In-Stock

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24,335

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Lixinc

USA . 19,358 parts In-Stock

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19,358

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Eastek

USA . 6,000 parts In-Stock

1+ parts

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6,000

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GreenTree Electronics

Israel . 6,000 parts In-Stock

1+ parts

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6,000

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Perfect Parts

USA . 5,889 parts In-Stock

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5,889

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Overview

Unleash the power of innovation with the MMSTA42-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers unparalleled quality and reliability in small signal bipolar junction transistors (BJTs). This versatile NPN transistor is perfect for switching applications, offering customers the value of high performance in a compact package. Whether you're looking to optimize your electronic designs or enhance your products, the MMSTA42-7-F provides the benefits and advantages you need to stay ahead in today's competitive market. Experience the difference with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and reliability for long-term use.

Polarity or Channel Type:

NPN - Offers high performance and efficiency in various applications.

Configuration:

SINGLE - Simplifies the design process and reduces complexity.

Transistor Application:

SWITCHING - Ideal for digital and analog circuit switching applications.

Surface Mount:

YES - Saves space and enhances overall PCB layout efficiency.

Package Shape:

RECTANGULAR - Facilitates easy integration into existing circuit designs.

Terminal Form:

GULL WING - Ensures secure soldering connections for reliable performance.

No. of Terminals:

3 - Easy to connect and integrate into circuitry.

Maximum Power Dissipation (Abs):

0.2 W - Suitable for low power applications with efficient heat dissipation.

Package Style (Meter):

SMALL OUTLINE - Saves space and enables compact circuit designs.

Minimum DC Current Gain (hFE):

40 - Ensures stable and consistent amplification performance.

Maximum Operating Temperature:

150 °C - Works reliably in varying environmental conditions.

Maximum Collector-Emitter Voltage:

300 V - Allows for high voltage handling capabilities.

Transistor Element Material:

SILICON - Provides high reliability and performance.

Maximum Collector Current (IC):

0.2 A - Suitable for low current applications with efficiency.

Terminal Finish:

MATTE TIN - Ensures reliable electrical connections and corrosion resistance.

Terminal Position:

DUAL - Facilitates easy mounting and soldering onto PCBs.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures safe and efficient soldering during manufacturing.

Peak Reflow Temperature °C:

260 - Compatible with standard reflow soldering processes.

Nominal Transition Frequency (fT):

50 MHz - Ensures fast switching speeds and high frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMSTA42-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMSTA42-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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