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MMSTA92-7-F

Diodes Incorporated

MMSTA92-7-F by Diodes Incorporated

Diodes Incorporated MMSTA92-7-F is a PNP BJT transistor with 300V VCEO, 0.1A IC, and 50MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 25 and 0.2W power dissipation.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,000 parts In-Stock

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$0.059

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$0.059

Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.095

100+ parts

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550

$0.095

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Chip Stock

USA . 78,000 parts In-Stock

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78,000

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IBS Electronics

USA . 24,000 parts In-Stock

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$0.070

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$0.070

NAC Semi

USA . 18,000 parts In-Stock

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$0.114

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$0.114

Vyrian

USA . 17,981 parts In-Stock

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Prism Electronics

USA . 2,573 parts In-Stock

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2,573

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Distributors (Availability)

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Ampacity Inc.

Singapore . 16,985 parts In-Stock

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$0.043

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$0.043

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Aranea Global

USA . 50 parts In-Stock

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$0.093

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$0.089

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50

$0.093

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$0.089

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Argo Parts USA

USA . 3,629 parts In-Stock

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$0.095

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$0.092

3,629

$0.095

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$0.092

Continental Prestige Electronics

USA . 1,094 parts In-Stock

1+ parts

$0.270

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$0.107

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$0.059

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1,094

$0.270

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Perfect Parts

USA . 28,730 parts In-Stock

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28,730

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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RC Electronics

USA . 11,700 parts In-Stock

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$0.020

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$0.020

$0.020

Eastek

USA . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Kepictronics

USA . 1,125 parts In-Stock

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Overview

With the MMSTA92-7-F by Diodes Incorporated, you can trust in top-quality manufacturing and reliable performance. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering a maximum power dissipation of 0.2W and a maximum collector-emitter voltage of 300V. Its PNP polarity and single configuration make it easy to use, while the surface-mount design adds convenience. Experience the value and benefits of this product, whether you're working on electronics projects at home or in a professional setting. Trust in Diodes Incorporated for quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit designs and allows for easy integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in such scenarios.

Surface Mount: YES

The surface mount capability makes installation and assembly more convenient, especially in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package provides compatibility with standard PCB layouts and allows for efficient use of space.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and secure connection to PCBs, improving overall product reliability.

No. of Terminals: 3

With three terminals, this transistor is easy to handle and connect in circuits, suitable for various applications.

Maximum Power Dissipation (Abs): 0.2 W

The high maximum power dissipation allows for reliable performance under demanding conditions, ensuring stable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices or densely populated circuits.

Minimum DC Current Gain (hFE): 25

With a minimum DC current gain of 25, this transistor offers consistent amplification and reliable signal processing capabilities.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for operation in a wide range of environments, ensuring versatility and reliability.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage ensures compatibility with a variety of circuits and applications, offering flexibility in design.

Transistor Element Material: SILICON

Silicon transistors have good electrical properties and are widely used in electronic devices for their reliability and performance.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for efficient power handling and reliable operation in various circuit configurations.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection to the PCB.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit layout and connection options, allowing for versatile applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures safe and reliable soldering during assembly, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for efficient and secure soldering, ensuring a strong connection between the transistor and PCB.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor offers fast response times and high-frequency operation, suitable for various signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMSTA92-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMSTA92-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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