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MMST3906-7-F

Diodes Incorporated

MMST3906-7-F by Diodes Incorporated

Diodes Inc. MMST3906-7-F is a PNP BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications requiring high transition frequency in a compact SOT package.

Median Price

$0.019

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,050 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

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$0.051

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$0.035

1,050

$0.210

$0.079

$0.051

$0.035

Mouser Electronics

USA . 2,784 parts In-Stock

1+ parts

$0.290

100+ parts

$0.105

1k+ parts

$0.065

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$0.047

2,784

$0.290

$0.105

$0.065

$0.047

Avnet

USA . 54,000 parts In-Stock

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Arrow

USA . 1,760 parts In-Stock

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Verical

USA . 1,760 parts In-Stock

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1,760

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ACDS - Activité Composants Distribution Service

France . 1,059,000 parts In-Stock

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Vyrian

USA . 183,022 parts In-Stock

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EPE Components Inc.

USA . 15,000 parts In-Stock

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.037

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$0.037

Chip Stock

USA . 9,500 parts In-Stock

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9,500

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NAC Semi

USA . 6,000 parts In-Stock

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A2Z Electronics, Inc.

USA . 5,359 parts In-Stock

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Bristol Electronics

USA . 5,359 parts In-Stock

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Speed Components Ltd

Israel . 3,550 parts In-Stock

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3,550

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Inventory MP

USA . 2,109 parts In-Stock

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PC Components Company LLC

USA . 540 parts In-Stock

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540

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Semtec, LLC

USA . 436 parts In-Stock

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436

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Diverse Electronics

Canada . 245 parts In-Stock

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Prism Electronics

USA . 218 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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North Shore Components

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Component Stockers USA

USA . 2,052 parts In-Stock

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$0.010

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$0.010

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$0.010

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2,052

$0.010

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Semicontronic

India . 328,661 parts In-Stock

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$0.019

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$0.018

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328,661

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Ampacity Inc.

Singapore . 328,641 parts In-Stock

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Aztec Data Supply Inc.

USA . 332 parts In-Stock

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$0.850

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Corohmni

South Africa . 358 parts In-Stock

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Andel Nordic

Denmark . 4,679 parts In-Stock

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$2.026

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$1.945

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4,679

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$1.945

Perfect Parts

USA . 2,528,744 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,092,829 parts In-Stock

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,768 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Lixinc

USA . 8,754 parts In-Stock

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Kepictronics

USA . 7,000 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,324 parts In-Stock

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GreenTree Electronics

Israel . 1,682 parts In-Stock

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Argo Parts USA

USA . 1,303 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Upgrade your electronics with the MMST3906-7-F by Diodes Incorporated, a top-tier manufacturer known for quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and versatility in various applications. With its PNP polarity, single configuration, and Gull Wing terminal form, this transistor is designed for seamless integration. Experience the benefits of a maximum operating temperature of 150°C, minimum DC current gain of 30, and maximum collector-emitter voltage of 40V. Trust in Diodes Incorporated to deliver value and innovation with the MMST3906-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are suitable for applications where positive current control is needed, providing flexibility in circuit design.

Configuration: SINGLE

A single configuration simplifies circuit design and assembly, making it easier to integrate into different systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliability and performance in various environmental conditions.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST3906-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMST3906-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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