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MMST2222A-7

Diodes Incorporated

MMST2222A-7 by Diodes Incorporated

Diodes Incorporated MMST2222A-7 is a NPN BJT transistor with hFE of 40, VCE of 40V, and IC of 0.6A. Ideal for high-frequency applications up to 300MHz with fast ton of 35ns and toff of 285ns. Suitable for surface mount designs in small outline packages.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 2,090 parts In-Stock

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$0.380

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$0.290

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$0.250

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Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

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EPE Components Inc.

USA . 275 parts In-Stock

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Bristol Electronics

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Nova Conductors

Japan . 47 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 838 parts In-Stock

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$6.925

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838

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Ampacity Inc.

Singapore . 743 parts In-Stock

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$50.050

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QUARKTWIN TECHNOLOGY LTD

USA . 16,392 parts In-Stock

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Argo Parts USA

USA . 3,437 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 1,959 parts In-Stock

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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Aranea Global

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Continental Prestige Electronics

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Perfect Parts

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Overview

Enhance your electronic designs with the MMST2222A-7 by Diodes Incorporated. As a leading manufacturer, Diodes Incorporated offers top-quality Small Signal Bipolar Junction Transistors (BJT) that are perfect for a wide range of applications. With its NPN polarity, single configuration, and compact rectangular package, this transistor delivers reliable performance in a small outline design. Increase efficiency and performance in your projects with the MMST2222A-7, featuring a high DC current gain, low turn on/off times, and a maximum collector-emitter voltage of 40V. Trust Diodes Incorporated to provide you with exceptional value and benefits, making your designs stand out from the rest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic projects.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and reducing assembly costs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliability and stability in various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

High voltage rating allows for versatile use in different circuit designs and applications.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency enables high-speed performance and efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMST2222A-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMST2222A-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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