Loading...

BC327-040

Onsemi

BC327-040 by Onsemi

BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 37,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

37,000

-

-

-

-

Vyrian

USA . 6,160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,160

-

-

-

-

Digiode

USA . 2,213 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,213

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 739 parts In-Stock

1+ parts

$16.210

100+ parts

-

1k+ parts

-

10k+ parts

-

739

$16.210

-

-

-

Component Stockers USA

USA . 582 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

582

$99.990

-

-

-

SupplyDigital Components

Austria . 8,041 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,041

-

-

-

-

Corphita

USA . 1,649 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,649

-

-

-

-

Kulean Microsystems

USA . 1,417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,417

-

-

-

-

Problanco Electronics

Mexico . 1,155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,155

-

-

-

-

UHIMA Technologies

Türkiye . 753 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

753

-

-

-

-

TANS Electronics

Latvia . 659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

659

-

-

-

-

Corohmni

South Africa . 315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

315

-

-

-

-

Northwest PG Solutions

USA . 208 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

208

-

-

-

-

Native Components

USA . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120

-

-

-

-

Overview

Enhance your electronic projects with the BC327-040 by Onsemi. Crafted by a reputable manufacturer, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and reliability. Ideal for amplifier applications, this PNP transistor boasts a DC current gain of 250 and a collector-emitter voltage of 45V. With a maximum operating temperature of 150 °C and a transition frequency of 260MHz, the BC327-040 delivers high performance in a compact cylindrical package. Upgrade your designs with this top-notch component and experience the value it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand a range of operating temperatures, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into amplifier circuits, making this transistor particularly useful for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making this transistor easy to work with.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers reliable performance and high fidelity audio output.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring reliable operation.

Package Shape: ROUND

The round package shape is compact and space-saving, making it easy to integrate into tight spaces or densely packed circuit boards.

No. of Terminals: 3

Having three terminals simplifies circuit connections and allows for flexibility in circuit design.

Minimum DC Current Gain (hFE): 250

The high DC current gain ensures efficient amplification and signal processing, making this transistor ideal for high performance applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environments and extreme conditions, ensuring reliable performance under tough conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage allows for the handling of high voltage signals, making this transistor versatile and suitable for a wide range of applications.

Maximum Collector Current (IC): 0.8 A

With a high maximum collector current, this transistor can handle high current loads without saturation, ensuring stable and reliable operation.

Nominal Transition Frequency (fT): 260 MHz

The high nominal transition frequency allows for fast signal switching and high frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC327-040 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC327-040 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20