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BC858BW-7-F

Diodes Incorporated

BC858BW-7-F by Diodes Incorporated

BC858BW-7-F by Diodes Inc. is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 220, and operates up to 150°C. With a package style of small outline and surface mount capability, it offers high performance in compact designs.

Median Price

$0.019

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 753 parts In-Stock

1+ parts

$0.170

100+ parts

$0.066

1k+ parts

$0.042

10k+ parts

$0.034

753

$0.170

$0.066

$0.042

$0.034

DigiKey

USA . 9,084 parts In-Stock

1+ parts

$0.180

100+ parts

$0.069

1k+ parts

$0.044

10k+ parts

$0.030

9,084

$0.180

$0.069

$0.044

$0.030

Verical

USA . 93,000 parts In-Stock

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-

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$0.019

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$0.019

Arrow

USA . 8,980 parts In-Stock

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$0.009

8,980

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$0.009

Future Electronics

Canada . 3,000 parts In-Stock

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$0.012

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$0.012

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IBS Electronics

USA . 48,000 parts In-Stock

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$0.027

48,000

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$0.027

NAC Semi

USA . 15,000 parts In-Stock

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$0.021

15,000

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$0.021

Chip Stock

USA . 6,090 parts In-Stock

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Vyrian

USA . 4,429 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 885 parts In-Stock

1+ parts

$6.390

100+ parts

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885

$6.390

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Kepictronics

USA . 21,843 parts In-Stock

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21,843

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QUARKTWIN TECHNOLOGY LTD

USA . 10,803 parts In-Stock

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10,803

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Northwest PG Solutions

USA . 584 parts In-Stock

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$6.262

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584

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$6.262

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the BC858BW-7-F by Diodes Incorporated. With a single PNP configuration and a high DC current gain of 220, this transistor offers exceptional performance in a compact package. Designed with quality materials and advanced technology, this transistor can handle up to 0.1A of collector current and operates at a maximum temperature of 150°C. Trust Diodes Incorporated for top-notch components that deliver outstanding value and reliability, making the BC858BW-7-F the ideal choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this product suitable for such purposes.

Configuration: SINGLE

Simplified design with single configuration makes it easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimized performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape is standardized and makes the transistor compatible with various applications and mounting options.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design ideal for devices where size is a constraint.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, expanding its range of potential applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858BW-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858BW-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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