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BC327-016

Onsemi

BC327-016 by Onsemi

BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.

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Digiode

USA . 1,072 parts In-Stock

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Native Components

USA . 870 parts In-Stock

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$0.058

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$0.056

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AZTECH Wire

Italy . 566 parts In-Stock

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$18.230

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QUARKTWIN TECHNOLOGY LTD

USA . 17,931 parts In-Stock

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Kulean Microsystems

USA . 6,777 parts In-Stock

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Problanco Electronics

Mexico . 3,599 parts In-Stock

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SupplyDigital Components

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Corphita

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TANS Electronics

Latvia . 1,830 parts In-Stock

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UHIMA Technologies

Türkiye . 877 parts In-Stock

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Corohmni

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Northwest PG Solutions

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Overview

Enhance your electronic projects with the BC327-016 by Onsemi, a high-quality PNP small signal bipolar junction transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for amplifier applications, providing exceptional power dissipation and a high DC current gain. Its plastic/epoxy package body ensures durability while its through-hole terminal form makes for easy installation. Elevate your design with the BC327-016 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier applications, making this transistor suitable for amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Round shape can help with better heat dissipation and makes it easier to mount onto circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle high-power applications efficiently.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for applications where size is a constraint.

Minimum DC Current Gain (hFE): 100

Having a minimum DC current gain of 100 ensures reliable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150 °C allows for reliable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45 V, this transistor can handle a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon material in the transistor element provides high performance and reliability in various applications.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8 A, this transistor can handle moderate current levels efficiently.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and corrosion resistance for long-lasting connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in circuit boards.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures reliable soldering during assembly processes.

Nominal Transition Frequency (fT): 260 MHz

High nominal transition frequency of 260 MHz indicates this transistor's capability for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC327-016 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC327-016 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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