Loading...

MMBTA05-7

Diodes Incorporated

MMBTA05-7 by Diodes Incorporated

Diodes Inc.'s MMBTA05-7 is a NPN BJT transistor with hFE of 100, VCE of 60V, and IC of 0.5A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With fT at 100MHz, it's commonly used in isolated case connections.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 4,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,018

-

-

-

-

Vyrian

USA . 3,402 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,402

-

-

-

-

PC Components Company LLC

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Atlantic Semiconductor

USA . 1,518 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,518

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

977

-

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,227 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,227

$4.050

-

-

-

AZTECH Wire

Italy . 782 parts In-Stock

1+ parts

$14.969

100+ parts

-

1k+ parts

-

10k+ parts

-

782

$14.969

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,798

-

-

-

-

Perfect Parts

USA . 2,188 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,188

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

977

-

-

-

-

Glotronic Ltd.

UK . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

782

-

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Upgrade your electronics with the MMBTA05-7 by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Perfect for all your switching needs, this NPN transistor is designed for maximum efficiency and precision. With its compact size and versatile configuration, the MMBTA05-7 is ideal for a wide range of applications. Trust in Diodes Incorporated's reputable manufacturing standards and experience the value and benefits this product brings to your projects. Elevate your designs with the MMBTA05-7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring reliability in various applications.

Polarity or Channel Type: NPN

NPN type allows for easy integration in many circuit designs, making it versatile for different applications.

Configuration: SINGLE

Simple single configuration simplifies circuit design and implementation, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient performance.

Surface Mount: YES

Surface mount capability enables easy PCB assembly, saving space and facilitating automated manufacturing.

Package Shape: RECTANGULAR

Rectangular shape allows for compact layout on PCBs, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connections, enhancing stability during soldering and handling.

No. of Terminals: 3

Simplified 3-terminal design for straightforward connections in circuit applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCB, enabling compact and efficient electronic designs.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and reliable amplification in various operating conditions.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring a maximum voltage of 60V, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5A enables handling of moderate power requirements in circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish facilitates soldering and ensures good electrical conductivity in connections.

Terminal Position: DUAL

Dual terminal position for versatile mounting options in circuit board layout.

Case Connection: ISOLATED

Isolated case connection enhances electrical safety and prevents short circuits in the system.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency of 100MHz ensures fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA05-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA05-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20