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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMBT4401WT1 by Onsemi

MMBT4401WT1

Onsemi

MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.

.6 A

6.5 pF

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V

MMBTA06WT1 by Onsemi

MMBTA06WT1

Onsemi

MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

MMBTA56WT1 by Onsemi

MMBTA56WT1

Onsemi

MMBTA56WT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V, max collector current of 0.5A, and min DC current gain of 100. This surface-mount transistor operates up to 150 °C and has a transition frequency of 50MHz.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

50 MHz

STX715 by STMicroelectronics

STX715

STMicroelectronics

STX715 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Ideal for efficient circuit designs with its cylindrical package and through-hole terminals.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

2DC4617R-7 by Diodes Incorporated

2DC4617R-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

180 MHz

2DC4617S-7 by Diodes Incorporated

2DC4617S-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

180 MHz

2N4125BU by Fairchild Semiconductor

2N4125BU

Fairchild Semiconductor

2N4125BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at a max temp of 150°C with a max collector current of 0.2A.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

2N4125TA by Fairchild Semiconductor

2N4125TA

Fairchild Semiconductor

2N4125TA by Fairchild Semiconductor is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style with through-hole terminals.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2N5089TA by Fairchild Semiconductor

2N5089TA

Fairchild Semiconductor

2N5089TA by Fairchild Semiconductor is a NPN BJT transistor with a max power dissipation of 0.35W and min hFE of 450, ideal for amplifier applications. It has a max VCE of 25V, IC of 0.1A, and fT of 50MHz. The package is cylindrical with matte tin finish and through-hole terminals.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

KSA733CLTA by Fairchild Semiconductor

KSA733CLTA

Fairchild Semiconductor

KSA733CLTA by Fairchild Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max power dissipation of 0.25W and a min DC current gain of 350. It is commonly used as an amplifier in various applications due to its high transition frequency of 180MHz and max collector-emitter voltage of 50V.

.15 A

50 V

SINGLE

350

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

180 MHz

KSB772YSTSTU by Fairchild Semiconductor

KSB772YSTSTU

Fairchild Semiconductor

KSB772YSTSTU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 10W, hFE of 160, and operates at up to 150°C. With a max VCE of 30V and IC of 3A, it offers high performance in a rectangular package suitable for flange mount installations.

3 A

30 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

10 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

80 MHz

KSC1815GRTA by Fairchild Semiconductor

KSC1815GRTA

Fairchild Semiconductor

KSC1815GRTA by Fairchild Semiconductor is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is commonly used in amplifier applications due to its high transition frequency of 80MHz and cylindrical package style for through-hole mounting.

.15 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

KSD1616GTA by Fairchild Semiconductor

KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

1 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

1 A

50 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616YTA by Fairchild Semiconductor

KSD1616YTA

Fairchild Semiconductor

Fairchild Semiconductor's KSD1616YTA is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W, hFE of 135, and fT of 160MHz. With a max collector-emitter voltage of 50V and operating temp up to 150°C, it suits various electronic designs requiring high-speed switching capabilities in compact cylindrical packages.

1 A

50 V

SINGLE

135

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD227YBU by Fairchild Semiconductor

KSD227YBU

Fairchild Semiconductor

Fairchild Semiconductor's KSD227YBU is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min DC current gain of 120 and can handle a max collector current of 0.3 A. With a max operating temperature of 150°C and collector-emitter voltage of 25 V, it comes in a cylindrical package suitable for through-hole mounting.

.3 A

25 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BC548CBU by Fairchild Semiconductor

BC548CBU

Fairchild Semiconductor

BC548CBU by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A. With a min DC current gain of 420, it's ideal for switching applications at up to 150°C operating temperature. The through-hole package style makes it easy to use in various electronic circuits.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CBU by Fairchild Semiconductor

BC549CBU

Fairchild Semiconductor

BC549CBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 420 and max IC of 0.1A. It is used for switching applications, has a max VCE of 30V, and operates up to 150°C. The package is cylindrical with through-hole terminals in matte tin finish.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC560CBU by Fairchild Semiconductor

BC560CBU

Fairchild Semiconductor

Fairchild Semiconductor's BC560CBU is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 420 and nominal transition frequency of 150MHz, it offers high performance in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

STPSA42 by STMicroelectronics

STPSA42

STMicroelectronics

STPSA42 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92 by STMicroelectronics

STPSA92

STMicroelectronics

STPSA92 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

2N5087BU by Fairchild Semiconductor

2N5087BU

Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.1 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

KSC1845FBU by Fairchild Semiconductor

KSC1845FBU

Fairchild Semiconductor

KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.

LOW NOISE

.05 A

120 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

110 MHz

MMBT3904-7 by Diodes Incorporated

MMBT3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

SS9013FBU by Fairchild Semiconductor

SS9013FBU

Fairchild Semiconductor

Fairchild Semiconductor SS9013FBU is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 96, and VCE of 20V. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

.5 A

20 V

SINGLE

96

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

SS9015ABU by Fairchild Semiconductor

SS9015ABU

Fairchild Semiconductor

SS9015ABU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.45W, hFE of 60, and fT of 190MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

LOW NOISE

.1 A

45 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

190 MHz

FMMTL717QTA by Diodes Incorporated

FMMTL717QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 205 MHz; Maximum Collector Current (IC): 1.25 A; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

1.25 A

12 V

SINGLE

50

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

205 MHz

BC817-16-7 by Diodes Incorporated

BC817-16-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-25-7 by Diodes Incorporated

BC817-25-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-40-7 by Diodes Incorporated

BC817-40-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

STX83003 by STMicroelectronics

STX83003

STMicroelectronics

STX83003 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Its cylindrical plastic package ensures reliable performance in various circuits.

1 A

400 V

SINGLE

4

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

MMBT2222A-7 by Diodes Incorporated

MMBT2222A-7

Diodes Incorporated

Diodes Inc.'s MMBT2222A-7 is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. With Gull Wing terminals in a small outline package, it offers fast turn-on/off times of 35ns/285ns.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MMBT3906-7 by Diodes Incorporated

MMBT3906-7

Diodes Incorporated

Diodes Inc. MMBT3906-7 is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for switching applications, it has a min. DC current gain of 30 and operates b/w -55 to 150°C efficiently in a small outline package shape for surface mount assembly.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

MMBT4124-7 by Diodes Incorporated

MMBT4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMBT4401-7 by Diodes Incorporated

MMBT4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 40;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMBTA42-7 by Diodes Incorporated

MMBTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;

.5 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMBT4403-7 by Diodes Incorporated

MMBT4403-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;

.6 A

40 V

SINGLE

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

MMBT5401-7 by Diodes Incorporated

MMBT5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBT5551-7 by Diodes Incorporated

MMBT5551-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

.2 A

160 V

SINGLE

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBTA92-7 by Diodes Incorporated

MMBTA92-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

300 V

SINGLE

25

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMST2222A-7 by Diodes Incorporated

MMST2222A-7

Diodes Incorporated

Diodes Incorporated MMST2222A-7 is a NPN BJT transistor with hFE of 40, VCE of 40V, and IC of 0.6A. Ideal for high-frequency applications up to 300MHz with fast ton of 35ns and toff of 285ns. Suitable for surface mount designs in small outline packages.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMBTA55-7 by Diodes Incorporated

MMBTA55-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMBTA56-7 by Diodes Incorporated

MMBTA56-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMSTA42-7 by Diodes Incorporated

MMSTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;

.2 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMSTA55-7 by Diodes Incorporated

MMSTA55-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMSTA92-7 by Diodes Incorporated

MMSTA92-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

300 V

SINGLE

25

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMST5401-7 by Diodes Incorporated

MMST5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMSTA05-7 by Diodes Incorporated

MMSTA05-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz