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KSC1815GRTA

Fairchild Semiconductor

KSC1815GRTA by Fairchild Semiconductor

KSC1815GRTA by Fairchild Semiconductor is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is commonly used in amplifier applications due to its high transition frequency of 80MHz and cylindrical package style for through-hole mounting.

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Overview

Elevate your amplifier designs with the KSC1815GRTA from Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-notch quality and reliability. This NPN small signal bipolar junction transistor is perfect for a wide range of applications, offering a minimum DC current gain of 200 and a maximum collector-emitter voltage of 50V. With a nominal transition frequency of 80 MHz, this transistor ensures optimal performance for your amplification needs. Trust Fairchild Semiconductor to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and resistance to external elements, making this transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuits and provides high performance in amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures reliable performance and efficient signal amplification.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltages without breakdown, increasing its versatility in various circuit designs.

Maximum Collector Current (IC): 0.15 A

The maximum collector current rating of 0.15 A allows for high current operation, making it suitable for applications requiring moderate power output.

Nominal Transition Frequency (fT): 80 MHz

The high nominal transition frequency of 80 MHz indicates fast switching speeds, ideal for applications requiring high-frequency signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1815GRTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1815GRTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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