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KSC1623LMTF

Onsemi

KSC1623LMTF by Onsemi

KSC1623LMTF by Onsemi is a NPN BJT transistor with 300 min hFE, 50V VCEO, and 250MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.031

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,281,210 parts In-Stock

1+ parts

-

100+ parts

$0.031

1k+ parts

$0.026

10k+ parts

$0.023

1,281,210

-

$0.031

$0.026

$0.023

Verical

USA . 848,000 parts In-Stock

1+ parts

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848,000

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DigiKey

USA . 390,000 parts In-Stock

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390,000

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Flip Electronics (Authorized)

USA . 390,000 parts In-Stock

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390,000

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Mouser Electronics

USA . 4,892 parts In-Stock

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$0.023

4,892

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$0.023

Element14

Singapore . 2,905 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.064

10k+ parts

$0.043

2,905

-

$0.097

$0.064

$0.043

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.019

100+ parts

-

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100

$0.019

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Digiode

USA . 436 parts In-Stock

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$0.024

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436

$0.024

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Vyrian

USA . 516,339 parts In-Stock

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516,339

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Flip Electronics

USA . 390,000 parts In-Stock

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390,000

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DigiKey Marketplace

USA . 390,000 parts In-Stock

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390,000

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Chip Stock

USA . 164,700 parts In-Stock

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164,700

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Distributors (Availability)

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Corohmni

South Africa . 70 parts In-Stock

1+ parts

$0.019

100+ parts

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70

$0.019

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Argo Parts USA

USA . 401 parts In-Stock

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$0.019

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$0.019

401

$0.019

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$0.019

Ampacity Inc.

Singapore . 516,488 parts In-Stock

1+ parts

$0.020

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516,488

$0.020

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Semicontronic

India . 516,077 parts In-Stock

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$0.020

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$0.020

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$0.019

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516,077

$0.020

$0.020

$0.019

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Corphita

USA . 2,306 parts In-Stock

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$0.022

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2,306

$0.022

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Aztec Data Supply Inc.

USA . 499 parts In-Stock

1+ parts

$1.472

100+ parts

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499

$1.472

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Infinite Electronics LLP (Excess)

. 60,006 parts In-Stock

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60,006

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QUARKTWIN TECHNOLOGY LTD

USA . 29,462 parts In-Stock

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29,462

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Perfect Parts

USA . 23,178 parts In-Stock

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23,178

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Continental Prestige Electronics

USA . 14,067 parts In-Stock

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$0.020

14,067

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$0.020

SupplyDigital Components

Austria . 8,337 parts In-Stock

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8,337

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A-Z Elektronik GmbH

Germany . 7,715 parts In-Stock

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TANS Electronics

Latvia . 6,416 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,143 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,574 parts In-Stock

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2,574

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Supply Digital

USA . 2,003 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Metaverse IC Inc.

Canada . 1,600 parts In-Stock

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1,600

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Assy Fe

Spain . 1,400 parts In-Stock

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1,400

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Netroflash

USA . 1,000 parts In-Stock

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$0.019

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$0.018

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$0.018

1,000

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$0.018

$0.018

Problanco Electronics

Mexico . 817 parts In-Stock

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817

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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220

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Overview

Enhance your electronic projects with the high-quality KSC1623LMTF Small Signal Bipolar Junction Transistor by Onsemi. Designed for amplifier applications, this NPN transistor offers reliability and performance in a compact rectangular package. With a minimum DC current gain of 300 and a maximum operating temperature of 150°C, this transistor provides optimal power dissipation and collector-emitter voltage for seamless integration. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that meets your needs and exceeds your expectations. Elevate your designs with the KSC1623LMTF and experience enhanced functionality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring stability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high efficiency.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable performance in audio or signal processing.

Surface Mount: YES

Easily mountable on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Compact shape makes it suitable for small and crowded PCB layouts.

Terminal Form: GULL WING

Offers good mechanical strength and stress relief for the terminals, reducing the risk of damage during handling or soldering.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small and lightweight package design for space-constrained applications.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient and effective signal amplification.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures without performance degradation or failure.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliable and stable performance.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels while maintaining stable operation.

Terminal Finish: Tin (Sn)

Tin finish offers good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on PCBs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process for efficient and reliable assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature ensures proper solder melting and bonding for secure connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables fast response and high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1623LMTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1623LMTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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