Loading...

KSC1815YBU

Onsemi

KSC1815YBU by Onsemi

The Onsemi KSC1815YBU is a NPN BJT transistor with hFE of 120, IC of 0.15A, and VCE of 50V. Ideal for amplifier applications, it operates up to 125°C with fT of 80MHz. Its cylindrical package and through-hole terminals make it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 73,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

73,000

-

-

-

-

Digiode

USA . 1,163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,163

-

-

-

-

Vyrian

USA . 238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

238

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,411 parts In-Stock

1+ parts

$1.310

100+ parts

-

1k+ parts

-

10k+ parts

-

4,411

$1.310

-

-

-

Ampacity Inc.

Singapore . 1,001 parts In-Stock

1+ parts

$10.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,001

$10.050

-

-

-

AZTECH Wire

Italy . 238 parts In-Stock

1+ parts

$14.280

100+ parts

-

1k+ parts

-

10k+ parts

-

238

$14.280

-

-

-

Semicontronic

India . 1,565 parts In-Stock

1+ parts

$18.050

100+ parts

$17.599

1k+ parts

$17.508

10k+ parts

-

1,565

$18.050

$17.599

$17.508

-

Problanco Electronics

Mexico . 5,858 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,858

-

-

-

-

Continental Prestige Electronics

USA . 5,776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,776

-

-

-

-

Corphita

USA . 2,866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,866

-

-

-

-

TANS Electronics

Latvia . 2,701 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,701

-

-

-

-

Supply Digital

USA . 2,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,069

-

-

-

-

Kulean Microsystems

USA . 1,349 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,349

-

-

-

-

SupplyDigital Components

Austria . 1,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,202

-

-

-

-

Argo Parts USA

USA . 565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

565

-

-

-

-

UHIMA Technologies

Türkiye . 542 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

542

-

-

-

-

Corohmni

South Africa . 152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

152

-

-

-

-

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Elevate your electronic designs with the KSC1815YBU by Onsemi! As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers top-notch quality and reliability. This NPN transistor is perfect for amplifier applications, offering a minimum DC current gain of 120 and a maximum collector-emitter voltage of 50V. With a nominal transition frequency of 80 MHz, this transistor ensures optimal performance in your circuit designs. Upgrade your projects today with the KSC1815YBU and experience the superior value and benefits it brings to your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other low-power applications, making this transistor versatile.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Compact and efficient design for easy PCB layout and assembly.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto a PCB, making installation and replacement straightforward.

No. of Terminals: 3

Simple and straightforward connection with external circuitry.

Package Style (Meter): CYLINDRICAL

Space-saving design for compact electronic devices.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient amplification of signals.

Maximum Operating Temperature: 125 °C

Can operate in a wide range of temperatures, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer better performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.15 A

Able to handle higher current levels, suitable for moderate power applications.

Terminal Finish: MATTE TIN

Provides a reliable and durable connection with external circuitry.

Terminal Position: BOTTOM

Easy accessibility for soldering and connection.

Nominal Transition Frequency (fT): 80 MHz

High frequency capability for fast switching and amplification of signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1815YBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1815YBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20