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KSC1008COBU

Onsemi

KSC1008COBU by Onsemi

KSC1008COBU by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 60V, and IC of 0.7A. Ideal for switching applications, it operates up to 150 °C. Its cylindrical package with matte tin finish makes it suitable for through-hole mounting in various electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,786 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

3,786

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,866 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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2,866

$0.024

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-

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Vyrian

USA . 2,167 parts In-Stock

1+ parts

$0.025

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-

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2,167

$0.025

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,330 parts In-Stock

1+ parts

$0.022

100+ parts

-

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-

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3,330

$0.022

-

-

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Corohmni

South Africa . 348 parts In-Stock

1+ parts

$0.025

100+ parts

-

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348

$0.025

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.827

100+ parts

$0.753

1k+ parts

$0.678

10k+ parts

-

5,000

$0.827

$0.753

$0.678

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Kulean Microsystems

USA . 7,526 parts In-Stock

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7,526

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Problanco Electronics

Mexico . 5,400 parts In-Stock

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5,400

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TANS Electronics

Latvia . 5,217 parts In-Stock

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5,217

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Supply Digital

USA . 2,797 parts In-Stock

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2,797

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SupplyDigital Components

Austria . 1,125 parts In-Stock

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1,125

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UHIMA Technologies

Türkiye . 45 parts In-Stock

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45

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Overview

Upgrade your electronic projects with the KSC1008COBU by Onsemi. Manufactured by a trusted leader in the industry, this small signal bipolar junction transistor offers high-quality performance and reliability. Ideal for switching applications, this NPN transistor provides a seamless experience with its single configuration and versatile package style. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 50MHz, this transistor is designed to meet your project needs with ease. Experience the value and benefits that Onsemi brings to the table with the KSC1008COBU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material for the package body provides good durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

The NPN polarity enables easy integration into circuits and offers stable performance for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in applications requiring a single switch.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in switching circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circular or compact spaces.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and easy soldering for reliable circuit connections.

No. of Terminals: 3

With three terminals, this transistor can easily be incorporated into various circuit designs and applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and versatile, making it suitable for a wide range of electronic devices and circuits.

Minimum DC Current Gain (hFE): 70

The minimum DC current gain of 70 ensures consistent and reliable performance in amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and maintain stable performance.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60V allows for versatile use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material for the transistor element ensures high performance, efficiency, and durability.

Maximum Collector Current (IC): 0.7 A

With a maximum collector current of 0.7A, this transistor can handle moderate to high current loads in various circuit applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good corrosion resistance and solderability for reliable and long-lasting connections.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connection in circuit designs.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor offers fast switching speeds and high-frequency performance for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1008COBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1008COBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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