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KSC1008OBU

Onsemi

KSC1008OBU by Onsemi

KSC1008OBU by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max collector current of 0.7A. It has a min DC current gain of 70, making it suitable for switching applications at up to 150 °C operating temperature in cylindrical package style.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 630,461 parts In-Stock

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$0.026

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$0.025

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$0.022

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630,461

$0.026

$0.025

$0.022

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Flip Electronics (Authorized)

USA . 53,015 parts In-Stock

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Digiode

USA . 1,791 parts In-Stock

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$0.025

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1,791

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Vyrian

USA . 1,792 parts In-Stock

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$0.026

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1,792

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Flip Electronics

USA . 53,015 parts In-Stock

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53,015

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Distributors (Availability)

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Corphita

USA . 1,975 parts In-Stock

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$0.023

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1,975

$0.023

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Corohmni

South Africa . 106 parts In-Stock

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$0.026

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106

$0.026

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RC Electronics

USA . 111,863 parts In-Stock

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111,863

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Perfect Parts

USA . 11,200 parts In-Stock

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TANS Electronics

Latvia . 8,165 parts In-Stock

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Assy Fe

Spain . 7,000 parts In-Stock

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Kulean Microsystems

USA . 5,857 parts In-Stock

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Problanco Electronics

Mexico . 5,157 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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SupplyDigital Components

Austria . 1,195 parts In-Stock

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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598

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Supply Digital

USA . 398 parts In-Stock

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398

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Microchip USA

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Overview

Upgrade your electronic projects with the KSC1008OBU by Onsemi! This Small Signal Bipolar Junction Transistor (BJT) offers high-quality performance and reliability, thanks to Onsemi's trusted manufacturing processes. Ideal for switching applications, this NPN transistor provides a maximum power dissipation of 0.8 W and a collector current of 0.7 A. Its versatile design and durable construction make it perfect for a wide range of projects. Experience the value and benefits of using the KSC1008OBU in your next electronics venture. Elevate your creations with Onsemi's exceptional product!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronics due to their versatility and compatibility with many circuits.

Configuration: SINGLE

Single configuration transistors are easy to implement in circuits and are suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance in switching circuits.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to be used in environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V provides flexibility in circuit design and operation.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50MHz, this transistor is capable of operating at high frequencies, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1008OBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1008OBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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