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MMBTA06WT1

Onsemi

MMBTA06WT1 by Onsemi

MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,740 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

2,740

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 16 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

16

$0.019

-

-

-

Digiode

USA . 843 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

843

$0.024

-

-

-

Vyrian

USA . 5,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

5,838

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

382

$0.019

-

-

-

Bastille Electronics

Australia . 600 parts In-Stock

1+ parts

$0.019

100+ parts

$0.018

1k+ parts

$0.017

10k+ parts

$0.017

600

$0.019

$0.018

$0.017

$0.017

Ampacity Inc.

Singapore . 2,299 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

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-

2,299

$0.021

-

-

-

Corphita

USA . 2,292 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

2,292

$0.022

-

-

-

AZTECH Wire

Italy . 1,040 parts In-Stock

1+ parts

$12.850

100+ parts

-

1k+ parts

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10k+ parts

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1,040

$12.850

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,708 parts In-Stock

1+ parts

-

100+ parts

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14,708

-

-

-

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SupplyDigital Components

Austria . 7,933 parts In-Stock

1+ parts

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100+ parts

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7,933

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TANS Electronics

Latvia . 5,231 parts In-Stock

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5,231

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-

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Kulean Microsystems

USA . 2,686 parts In-Stock

1+ parts

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100+ parts

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2,686

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Problanco Electronics

Mexico . 1,031 parts In-Stock

1+ parts

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1,031

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UHIMA Technologies

Türkiye . 894 parts In-Stock

1+ parts

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894

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Perfect Parts

USA . 616 parts In-Stock

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616

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Overview

Enhance your electronic projects with the MMBTA06WT1 by Onsemi, a top-tier manufacturer known for delivering quality components. As part of the Small Signal Bipolar Junction Transistors category, this NPN transistor offers reliable amplification in a compact package. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 100, this transistor is perfect for various applications. Enjoy the benefits of easy surface mount installation, high power dissipation, and exceptional performance at an affordable price point. Upgrade your circuits with the MMBTA06WT1 and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification and switching applications, making this transistor versatile in various circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance and reliability in audio or signal amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and making the manufacturing process more efficient.

Package Shape: RECTANGULAR

Rectangular shape is space-saving and fits well on PCB layouts, optimizing the use of available space.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and enable easy soldering during manufacturing.

No. of Terminals: 3

Three terminals provide standard connection options, allowing for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.15 W

High maximum power dissipation enables the transistor to handle more power without overheating, ensuring reliable operation in demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and reduces overall footprint, ideal for compact designs.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures reliable amplification performance, making this transistor suitable for various signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand harsh environmental conditions, ensuring stability and longevity in extreme temperature environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating provides a wide range of voltage compatibility, making this transistor suitable for different voltage levels in various circuits.

Transistor Element Material: SILICON

Silicon material offers superior electrical properties, ensuring reliable and consistent performance in amplification and signal processing applications.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating allows the transistor to handle higher current loads, making it suitable for applications that require high power output.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures a reliable electrical connection, enhancing the overall performance and durability of the transistor.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connection options, making it easy to integrate into various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures quick and efficient soldering process during manufacturing.

Peak Reflow Temperature °C: 235

High peak reflow temperature rating ensures the transistor can withstand the soldering process without damage, ensuring reliability in manufacturing.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows the transistor to operate at high frequencies, suitable for applications requiring fast signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA06WT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA06WT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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