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MMBTA56WT1

Onsemi

MMBTA56WT1 by Onsemi

MMBTA56WT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V, max collector current of 0.5A, and min DC current gain of 100. This surface-mount transistor operates up to 150 °C and has a transition frequency of 50MHz.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,750 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

2,750

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 953 parts In-Stock

1+ parts

$0.024

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-

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953

$0.024

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Chip Stock

USA . 47,000 parts In-Stock

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47,000

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Vyrian

USA . 5,831 parts In-Stock

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5,831

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,571 parts In-Stock

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$0.021

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2,571

$0.021

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Corphita

USA . 1,257 parts In-Stock

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$0.022

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1,257

$0.022

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Corohmni

South Africa . 467 parts In-Stock

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$0.025

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467

$0.025

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AZTECH Wire

Italy . 1,003 parts In-Stock

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$19.470

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1,003

$19.470

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Component Stockers USA

USA . 738 parts In-Stock

1+ parts

$99.990

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738

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 25,672 parts In-Stock

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Kulean Microsystems

USA . 6,890 parts In-Stock

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6,890

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TANS Electronics

Latvia . 6,732 parts In-Stock

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Problanco Electronics

Mexico . 5,515 parts In-Stock

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5,515

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SupplyDigital Components

Austria . 2,051 parts In-Stock

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Overview

Discover the ultimate solution for your amplifier needs with the MMBTA56WT1 by Onsemi. Crafted with precision and expertise, this PNP Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. From its compact design to its high DC current gain, this transistor is engineered to exceed expectations. Whether you're amplifying signals or enhancing audio quality, this product delivers superior results. Trust in Onsemi's reputation for excellence and elevate your projects with the MMBTA56WT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easy to use in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space in electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape is easy to handle and mount on PCBs, making the transistor user-friendly for integration.

No. of Terminals: 3

Three terminals provide standard connections for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.15 W

The high power dissipation rating allows the transistor to handle higher power levels, improving overall performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and makes it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient amplification and performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to be used in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating ensures the transistor can handle higher voltage levels, increasing its versatility.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability, ensuring stable performance over time.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows the transistor to handle higher current levels, improving its capability in amplifier circuits.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and reliability, making the transistor easy to solder on PCBs.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB mounting options, improving ease of use in circuit design.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows the transistor to withstand reflow soldering processes, ensuring reliable solder joints.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables the transistor to operate at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA56WT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA56WT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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