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KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

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Overview

Looking for a reliable solution for your switching needs? Look no further than the KSD1616GTA by Fairchild Semiconductor. Known for their top-notch quality and innovation, Fairchild Semiconductor delivers a Small Signal Bipolar Junction Transistor that exceeds expectations. With a maximum power dissipation of 0.75 W and a DC current gain of 200, this NPN transistor is perfect for various applications. Whether you need it for switching or any other purpose, the KSD1616GTA offers unmatched performance and value. Upgrade your electronics with the best in the industry!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration in circuits and compatibility with other NPN components.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it a reliable choice for such functions.

Package Shape: ROUND

The round package shape offers efficient space utilization and facilitates easy mounting.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure and reliable connections in circuit boards.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chance of error in circuit assembly.

Maximum Power Dissipation (Abs): 0.75 W

With a maximum power dissipation of 0.75 W, this transistor can handle moderate power levels effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides mechanical stability and ease of handling during installation.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures consistent and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50 V allows for safe operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable and consistent performance.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate current levels effectively.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and durable connection for the transistor.

Terminal Position: BOTTOM

The bottom terminal position offers convenient soldering and connection options for circuit board assembly.

Nominal Transition Frequency (fT): 160 MHz

A high nominal transition frequency of 160 MHz indicates good high-frequency performance, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616GTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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