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KSD1621UTF

Onsemi

KSD1621UTF by Onsemi

KSD1621UTF by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 25V, max collector current of 2A, and min DC current gain of 280. With a package style of small outline and surface mount capability, it operates at up to 150 °C making it suitable for various electronic devices.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$2.021

100+ parts

$1.839

1k+ parts

$1.657

10k+ parts

-

2,500

$2.021

$1.839

$1.657

-

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

8,000

-

$0.119

$0.099

$0.088

DigiKey

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

8,000

-

-

-

$0.150

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

8,000

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,971 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

1,971

$0.079

-

-

-

Digiode

USA . 425 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

425

$0.093

-

-

-

Chip Stock

USA . 27,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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27,500

-

-

-

-

DigiKey Marketplace

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 174 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

174

$0.079

-

-

-

Corphita

USA . 1,225 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

1,225

$0.088

-

-

-

Component Stockers USA

USA . 4,882 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

4,882

$0.100

$0.090

$0.080

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.021

100+ parts

$1.839

1k+ parts

$1.657

10k+ parts

-

2,500

$2.021

$1.839

$1.657

-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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25,000

-

-

-

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Kepictronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

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24,000

-

-

-

-

Continental Prestige Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.117

10k+ parts

-

8,000

-

-

$0.117

-

TANS Electronics

Latvia . 7,272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,272

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,890

-

-

-

-

SupplyDigital Components

Austria . 4,704 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,704

-

-

-

-

Alle Elektronik GmbH

Germany . 4,593 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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4,593

-

-

-

-

Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

-

100+ parts

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1,800

-

-

-

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Kulean Microsystems

USA . 1,558 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,558

-

-

-

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Problanco Electronics

Mexico . 1,094 parts In-Stock

1+ parts

-

100+ parts

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1,094

-

-

-

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Supply Digital

USA . 1,089 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,089

-

-

-

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UHIMA Technologies

Türkiye . 747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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747

-

-

-

-

Overview

Enhance your electronic projects with the KSD1621UTF by Onsemi, a high-quality NPN transistor that offers reliable switching capabilities. Manufactured by Onsemi, a trusted name in the industry, this small signal BJT is perfect for a variety of applications. From amplifiers to power supplies, this transistor provides excellent performance and efficiency. With a maximum collector-emitter voltage of 25V and a maximum collector current of 2A, the KSD1621UTF is sure to meet your project needs. Upgrade your designs with this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor for versatile applications such as amplification and switching.

Configuration: SINGLE

Simplified design with a single transistor in the package, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in turning on and off electrical signals.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Compact shape that optimizes space utilization on the circuit board, ideal for dense layouts.

Terminal Form: FLAT

Flat terminals for secure soldering connections, reducing the risk of mechanical stress during assembly and operation.

No. of Terminals: 3

Simple and straightforward connection setup with only three terminals, suitable for basic transistor circuits.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling up to 0.5 watts of power dissipation, ensuring reliable operation without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space on the circuit board and enhances thermal performance.

Minimum DC Current Gain (hFE): 280

High DC current gain ensures efficient amplification of weak signals with minimal distortion.

Maximum Operating Temperature: 150 °C

Wide operating temperature range up to 150 °C, suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 25 V

High collector-emitter voltage rating provides a wide voltage range for circuit design flexibility.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 60 ns

Fast turn-on time enables quick switching of signals, improving overall circuit efficiency.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling substantial current loads in switching applications.

Maximum Turn Off Time (toff): 525 ns

Sufficient turn-off time for effective signal switching and minimizing potential signal distortion.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and resistance to corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection and reduces the risk of misalignment during assembly.

Case Connection: COLLECTOR

Collector case connection facilitates efficient heat dissipation, enhancing the transistor's thermal performance.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for reliable amplification and switching of high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1621UTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

280

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

525 ns

Maximum Turn On Time (ton):

60 ns

Trade Compliance

KSD1621UTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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