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KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

Median Price

$0.086

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Rochester

USA . 10,000 parts In-Stock

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$0.092

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$0.077

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$0.068

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$0.092

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$0.068

Farnell

UK . 10,000 parts In-Stock

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$0.063

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$0.063

Verical

USA . 10,000 parts In-Stock

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$0.086

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$0.086

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Nova Conductors

Japan . 500 parts In-Stock

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Digiode

USA . 757 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 9,960 parts In-Stock

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$0.054

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Semicontronic

India . 9,583 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$0.066

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$0.064

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Argo Parts USA

USA . 4,791 parts In-Stock

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Continental Prestige Electronics

USA . 1,897 parts In-Stock

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Corphita

USA . 395 parts In-Stock

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Component Stockers USA

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.586

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$1.443

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$1.301

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Andel Nordic

Denmark . 363 parts In-Stock

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$1.746

AZTECH Wire

Italy . 1,096 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Authorized Procurement Solutions

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Supply Digital

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Overview

Upgrade your electronic devices with the high-quality KSD1616LBU Small Signal Bipolar Junction Transistor by Fairchild Semiconductor. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a DC current gain of 300, ensuring reliable performance. With a maximum power dissipation of 0.75W and a nominal transition frequency of 160MHz, this transistor is perfect for a wide range of projects. Trust in Fairchild Semiconductor's expertise and innovation to deliver top-notch components for your next electronics venture.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability for long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits.

Configuration: SINGLE

Simplified circuit design and easy to integrate into various applications.

Transistor Application: SWITCHING

Designed for efficient switching operations with fast response times.

Package Shape: ROUND

Compact design allows for space-efficient mounting on PCBs.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs and provides secure connections.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in designs.

Maximum Power Dissipation (Abs): 0.75 W

Can handle moderate power levels for reliable performance.

Package Style (Meter): CYLINDRICAL

Provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 300

Ensures consistent and reliable amplification in various circuits.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Provides good performance, reliability, and stability in various environments.

Maximum Collector Current (IC): 1 A

Can handle currents up to 1A for a wide range of applications.

Terminal Finish: MATTE TIN

Ensures good solderability and electrical conductivity for reliable connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and assembly.

Nominal Transition Frequency (fT): 160 MHz

Provides high-frequency capabilities for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616LBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616LBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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