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KSD1621STF

Onsemi

KSD1621STF by Onsemi

KSD1621STF by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.5W, hFE of 140, and can handle up to 2A collector current. With a max operating temp of 150 °C, it's ideal for small outline packages in high-frequency circuits up to 150MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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Digiode

USA . 1,151 parts In-Stock

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Vyrian

USA . 1,113 parts In-Stock

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1,113

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Advanced Electronics

New Zealand . 69 parts In-Stock

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$1.687

100+ parts

$1.535

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$1.383

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69

$1.687

$1.535

$1.383

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Problanco Electronics

Mexico . 5,695 parts In-Stock

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5,695

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Kepictronics

USA . 3,720 parts In-Stock

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3,720

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Kulean Microsystems

USA . 3,676 parts In-Stock

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3,676

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QUARKTWIN TECHNOLOGY LTD

USA . 3,263 parts In-Stock

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Corphita

USA . 3,217 parts In-Stock

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3,217

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Supply Digital

USA . 2,662 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,198 parts In-Stock

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SupplyDigital Components

Austria . 1,971 parts In-Stock

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TANS Electronics

Latvia . 1,708 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,465 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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149

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Overview

Enhance your electronic projects with the KSD1621STF by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their innovative solutions and reliability, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 0.5W and a high DC current gain of 140, this transistor offers exceptional performance. Its compact package and surface mount design make it easy to integrate into any project. Upgrade your circuits today with the KSD1621STF and experience the difference in efficiency and functionality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance in a wide range of applications.

Configuration: SINGLE

Simplified design with a single transistor in the package, making it easier to use in circuits.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast switching speeds and low ON-resistance.

Surface Mount: YES

Suitable for surface mount technology, making it easier to integrate into PCB designs and saving space.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and routing on a circuit board.

Terminal Form: FLAT

Flat terminals provide a secure connection and easy soldering onto a PCB.

Maximum Power Dissipation (Abs): 0.5 W

Can handle a maximum power dissipation of 0.5W, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

Able to operate at temperatures up to 150 °C, providing reliability in high-temperature environments.

Maximum Collector-Emitter Voltage: 25 V

Can withstand a maximum voltage of 25V, making it suitable for low voltage applications.

Transistor Element Material: SILICON

Silicon-based material offers good performance, reliability, and temperature stability.

Maximum Collector Current (IC): 2 A

Capable of handling a maximum collector current of 2A, suitable for medium-power applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency of 150MHz enables high-speed switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1621STF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1621STF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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