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KSD1616ALTA

Onsemi

KSD1616ALTA by Onsemi

KSD1616ALTA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. With a min. DC current gain of 300, it's ideal for switching applications at up to 150°C operating temperature. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting in various electronic circuits.

Median Price

$0.071

Lifecycle Status

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11

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1k+

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Arrow

USA . 51 parts In-Stock

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$0.221

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$0.128

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Rochester

USA . 55,575 parts In-Stock

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$0.062

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$0.051

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$0.046

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$0.062

$0.051

$0.046

DigiKey

USA . 52,699 parts In-Stock

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Verical

USA . 17,884 parts In-Stock

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USA . 2,000 parts In-Stock

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Digiode

USA . 2,533 parts In-Stock

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Nova Conductors

Japan . 58 parts In-Stock

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

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USA . 2,000 parts In-Stock

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DigiKey Marketplace

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Semicontronic

India . 20,153 parts In-Stock

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$0.046

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$0.045

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$0.045

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Ampacity Inc.

Singapore . 20,008 parts In-Stock

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$0.046

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Corphita

USA . 1,189 parts In-Stock

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$0.049

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Corohmni

South Africa . 384 parts In-Stock

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$0.054

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Argo Parts USA

USA . 1,159 parts In-Stock

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$0.099

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Bastille Electronics

Australia . 200 parts In-Stock

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$0.102

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$0.097

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$0.092

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$0.091

200

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$0.097

$0.092

$0.091

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Continental Prestige Electronics

USA . 18,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Glotronic Ltd.

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TANS Electronics

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UHIMA Technologies

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Overview

Experience the difference with the KSD1616ALTA from Onsemi, a leading manufacturer in small signal bipolar junction transistors. This high-quality NPN transistor is designed for switching applications, offering a maximum collector-emitter voltage of 60V and a nominal transition frequency of 160MHz. Its durable plastic/epoxy package ensures reliability while its single configuration simplifies installation. Trust Onsemi to deliver top-notch performance and versatility in every product. Upgrade your electronics with the KSD1616ALTA and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection, making the transistor suitable for versatile applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the complexity of the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient operation.

Package Shape: ROUND

The round shape allows for easy mounting and fitting in various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections, enhancing the reliability of the transistor in circuit assemblies.

No. of Terminals: 3

Having three terminals enables versatile connections and compatibility with different circuit configurations.

Maximum Power Dissipation (Abs): 0.75 W

With a maximum power dissipation of 0.75W, the transistor can handle moderate power loads with efficiency.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact design, saving space in circuit layouts.

Minimum DC Current Gain (hFE): 300

Having a minimum DC current gain of 300 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to function effectively in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, the transistor can handle higher voltage levels in circuits.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics, ensuring consistent and reliable operation.

Maximum Collector Current (IC): 1 A

The transistor can handle a maximum collector current of 1A, making it suitable for medium to high-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures good electrical contact for reliable performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies mounting and allows for easy integration into circuit layouts.

Nominal Transition Frequency (fT): 160 MHz

With a nominal transition frequency of 160MHz, the transistor can handle high-frequency signal processing and switching tasks effectively.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616ALTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616ALTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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