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KSD1621TTF

Onsemi

KSD1621TTF by Onsemi

KSD1621TTF by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.5W, hFE of 200, and can handle a max collector current of 2A. Ideal for small outline packages in devices requiring high-speed switching capabilities up to 150MHz at temperatures up to 150 °C.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

56,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.100

56,000

-

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$0.100

Farnell

UK . 56,000 parts In-Stock

1+ parts

-

100+ parts

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$0.056

56,000

-

-

-

$0.056

Verical

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.073

56,000

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,093 parts In-Stock

1+ parts

$0.056

100+ parts

-

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3,093

$0.056

-

-

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Digiode

USA . 1,705 parts In-Stock

1+ parts

$0.062

100+ parts

-

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1,705

$0.062

-

-

-

DigiKey Marketplace

USA . 56,000 parts In-Stock

1+ parts

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56,000

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Chip Stock

USA . 28,439 parts In-Stock

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28,439

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Distributors (Availability)

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Corohmni

South Africa . 233 parts In-Stock

1+ parts

$0.056

100+ parts

-

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233

$0.056

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Corphita

USA . 1,771 parts In-Stock

1+ parts

$0.058

100+ parts

-

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1,771

$0.058

-

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Continental Prestige Electronics

USA . 56,000 parts In-Stock

1+ parts

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100+ parts

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$0.078

10k+ parts

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56,000

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-

$0.078

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

1+ parts

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36,530

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QUARKTWIN TECHNOLOGY LTD

USA . 21,479 parts In-Stock

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21,479

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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A-Z Elektronik GmbH

Germany . 7,055 parts In-Stock

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7,055

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Alle Elektronik GmbH

Germany . 4,703 parts In-Stock

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4,703

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Kulean Microsystems

USA . 4,472 parts In-Stock

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4,472

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Problanco Electronics

Mexico . 3,916 parts In-Stock

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3,916

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SupplyDigital Components

Austria . 3,593 parts In-Stock

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3,593

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TANS Electronics

Latvia . 1,602 parts In-Stock

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1,602

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Supply Digital

USA . 1,056 parts In-Stock

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1,056

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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378

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Overview

Enhance your electronic projects with the KSD1621TTF by Onsemi, a top-quality NPN transistor perfect for switching applications. Manufactured by industry leader Onsemi, this small signal bipolar junction transistor offers unmatched reliability and performance. With a maximum collector-emitter voltage of 25V and a nominal transition frequency of 150MHz, the KSD1621TTF is ideal for a wide range of applications. Experience the value and benefits of this high-quality transistor today and take your projects to the next level with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic epoxy package provides good insulation and protects the transistor from external factors, increasing its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, making this transistor versatile and suitable for a variety of circuits.

Configuration: SINGLE

Single configuration simplifies the circuit design, making it easier to integrate into a system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on PCBs, saving space and improving manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to handle and integrate into circuit designs.

Terminal Form: FLAT

Flat terminals provide a stable connection and easy soldering during assembly, ensuring good electrical contact.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power loads without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for denser circuit designs.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures signal amplification and stable transistor operation in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environments without risk of thermal damage.

Maximum Collector-Emitter Voltage: 25 V

High collector-emitter voltage rating provides flexibility in voltage requirements for different circuit designs.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance characteristics, making it a popular choice in transistor manufacturing.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle moderate to high current loads, making it suitable for various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and corrosion resistance, improving the longevity and reliability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies the assembly process and ensures correct orientation during installation.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1621TTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1621TTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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