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KSD1616GBU

Fairchild Semiconductor

KSD1616GBU by Fairchild Semiconductor

KSD1616GBU by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 50V and max current of 1A. With a min DC current gain of 200, it's ideal for switching applications. This through-hole transistor has a package style of cylindrical and can handle up to 0.75W power dissipation.

Median Price

$0.051

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Farnell

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Rochester

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DigiKey

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Verical

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Nova Conductors

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Advanced Electronics

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Overview

Upgrade your electronics with the KSD1616GBU by Fairchild Semiconductor, a high-quality NPN Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum power dissipation of 0.75W and a minimum DC current gain of 200, this transistor offers reliable performance at a maximum collector-emitter voltage of 50V and a maximum operating temperature of 150°C. Trust in the expertise of Fairchild Semiconductor to deliver top-notch components that enhance the functionality of your devices. Experience improved efficiency and seamless operation with the KSD1616GBU - the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for various electronic circuits.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed for efficient switching operations, ideal for applications requiring fast on/off transitions.

Package Shape: ROUND

Round shape allows for easy mounting and integration in compact spaces, making it suitable for small electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of soldering, ensuring secure installation on circuit boards.

Maximum Power Dissipation (Abs): 0.75 W

Can handle moderate power levels, suitable for various applications without overheating or damaging the transistor.

Minimum DC Current Gain (hFE): 200

High DC current gain allows for efficient signal amplification, ensuring accurate and reliable signal processing.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for environments with elevated heat levels.

Maximum Collector-Emitter Voltage: 50 V

Withstands high voltage levels, making it suitable for applications requiring voltage amplification or switching.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, ensuring consistent operation over the product's lifespan.

Maximum Collector Current (IC): 1 A

Can handle high current levels, suitable for applications requiring power switching or amplification.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and electrical conductivity, ensuring reliable connections with other components.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout and installation, making it easy to incorporate into circuit designs.

Nominal Transition Frequency (fT): 160 MHz

High transition frequency allows for fast signal switching, making it ideal for high-speed applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616GBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616GBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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