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KSD1616AYBU

Onsemi

KSD1616AYBU by Onsemi

KSD1616AYBU by Onsemi is a NPN BJT transistor with hFE of 135, Vce of 60V, and Ic of 1A. Ideal for switching applications, it operates up to 150 °C with fT of 160MHz. Its cylindrical package with matte tin finish has three terminals in a through-hole configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,271 parts In-Stock

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Vyrian

USA . 2,124 parts In-Stock

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MISTER SPROCKETS

USA . 1,000 parts In-Stock

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1,000

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Ampacity Inc.

Singapore . 428 parts In-Stock

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$46.050

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428

$46.050

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TANS Electronics

Latvia . 4,778 parts In-Stock

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Corphita

USA . 2,783 parts In-Stock

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Problanco Electronics

Mexico . 1,733 parts In-Stock

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1,733

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SupplyDigital Components

Austria . 1,502 parts In-Stock

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Supply Digital

USA . 1,472 parts In-Stock

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Kulean Microsystems

USA . 631 parts In-Stock

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Corohmni

South Africa . 499 parts In-Stock

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499

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Overview

Enhance your electronic projects with the KSD1616AYBU by Onsemi, a high-quality NPN bipolar junction transistor ideal for switching applications. Manufactured by Onsemi, known for their reliable and innovative components, this transistor offers a maximum collector-emitter voltage of 60V and a minimum DC current gain of 135, ensuring optimal performance. Whether you're working on DIY electronics or professional circuits, the KSD1616AYBU provides the precision and efficiency you need to bring your designs to life. Upgrade your projects today with this versatile and dependable component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used type of BJT for many electronic circuits.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance.

Package Shape: ROUND

Easy to handle and install in circular arrangements.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure connections.

No. of Terminals: 3

Simple and straightforward connectivity.

Package Style (Meter): CYLINDRICAL

Provides a compact and space-saving form factor.

Minimum DC Current Gain (hFE): 135

Consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Operates efficiently in high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications where higher voltage handling is required.

Transistor Element Material: SILICON

Offers high performance and reliability.

Maximum Collector Current (IC): 1 A

Handles moderate current levels for various applications.

Terminal Finish: MATTE TIN

Provides corrosion resistance and good solderability.

Terminal Position: BOTTOM

Facilitates easy PCB layout and connections.

Nominal Transition Frequency (fT): 160 MHz

Capable of high-frequency operation, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616AYBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

135

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616AYBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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