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KSD1616AGTA

Onsemi

KSD1616AGTA by Onsemi

KSD1616AGTA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max collector current of 1A. With a min DC current gain of 200, it's ideal for switching applications. This through-hole transistor has a max power dissipation of 0.75W and operates up to 150°C.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7,999 parts In-Stock

1+ parts

$0.066

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7,999

$0.066

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Mouser Electronics

USA . 4,147 parts In-Stock

1+ parts

$0.590

100+ parts

$0.231

1k+ parts

$0.174

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4,147

$0.590

$0.231

$0.174

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DigiKey

USA . 36,000 parts In-Stock

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$0.120

36,000

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$0.120

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

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36,000

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Verical

USA . 8,000 parts In-Stock

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$0.115

8,000

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$0.115

Master Electronics

USA . 8,000 parts In-Stock

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$0.093

8,000

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$0.093

Chip1Stop

Japan . 2,028 parts In-Stock

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100+ parts

$0.077

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$0.077

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$0.077

2,028

-

$0.077

$0.077

$0.077

Rochester

USA . 668 parts In-Stock

1+ parts

-

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$0.119

1k+ parts

$0.099

10k+ parts

$0.088

668

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,723 parts In-Stock

1+ parts

$0.076

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2,723

$0.076

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Nova Conductors

Japan . 50 parts In-Stock

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$0.112

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50

$0.112

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Flip Electronics

USA . 24,000 parts In-Stock

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 11,278 parts In-Stock

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11,278

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Cyclops Electronics Ltd

UK . 9,000 parts In-Stock

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9,000

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IBS Electronics

USA . 8,000 parts In-Stock

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$0.130

8,000

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$0.130

DigiKey Marketplace

USA . 6,304 parts In-Stock

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6,304

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 1,095 parts In-Stock

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$0.113

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$0.068

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1,095

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$0.113

$0.068

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,047 parts In-Stock

1+ parts

$0.049

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11,047

$0.049

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Semicontronic

India . 11,002 parts In-Stock

1+ parts

$0.049

100+ parts

$0.048

1k+ parts

$0.048

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11,002

$0.049

$0.048

$0.048

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Corohmni

South Africa . 433 parts In-Stock

1+ parts

$0.068

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433

$0.068

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Corphita

USA . 1,739 parts In-Stock

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$0.072

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1,739

$0.072

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Continental Prestige Electronics

USA . 3,416 parts In-Stock

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$0.112

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$0.109

3,416

$0.112

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Argo Parts USA

USA . 2,358 parts In-Stock

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$0.112

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$0.108

2,358

$0.112

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$0.108

Netroflash

USA . 100 parts In-Stock

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$0.112

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100

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

USA . 19,554 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,520 parts In-Stock

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TANS Electronics

Latvia . 7,587 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,636 parts In-Stock

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Problanco Electronics

Mexico . 3,822 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,757 parts In-Stock

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Kulean Microsystems

USA . 3,193 parts In-Stock

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Supply Digital

USA . 2,366 parts In-Stock

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2,366

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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374

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SupplyDigital Components

Austria . 257 parts In-Stock

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Kepictronics

USA . 200 parts In-Stock

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200

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Overview

Enhance your electronic projects with the KSD1616AGTA by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and performance. With a maximum power dissipation of 0.75 W and a maximum collector-emitter voltage of 60V, this transistor is perfect for a variety of applications. Upgrade your designs with the KSD1616AGTA and experience the value and benefits it provides to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and provides better amplification capabilities.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity while ensuring reliable performance.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic switch circuits.

Package Shape: ROUND

Round package shape allows for easier mounting and handling, making it convenient for assembly and integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and secure connection, ensuring stable operation in various electronic devices.

Maximum Power Dissipation (Abs): 0.75 W

With a high maximum power dissipation of 0.75 W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 indicates good amplification capability, ensuring accurate signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand harsh environmental conditions and operate reliably in various applications.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage of 60 V allows for the handling of higher voltages, making this transistor suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures stable and reliable performance, offering high efficiency and long-term durability.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A indicates the transistor's ability to handle higher current levels, making it suitable for various electronic applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, making installation hassle-free and ensuring a secure connection.

Nominal Transition Frequency (fT): 160 MHz

High nominal transition frequency of 160 MHz indicates fast switching speed, allowing for quick response times in signal processing and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616AGTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616AGTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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