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KSD1616AYTA

Onsemi

KSD1616AYTA by Onsemi

KSD1616AYTA by Onsemi is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 1A. It is commonly used for switching applications due to its high transition frequency of 160MHz.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 414 parts In-Stock

1+ parts

$0.098

100+ parts

$0.092

1k+ parts

$0.083

10k+ parts

-

414

$0.098

$0.092

$0.083

-

Mouser Electronics

USA . 1,092 parts In-Stock

1+ parts

$0.480

100+ parts

$0.219

1k+ parts

$0.138

10k+ parts

$0.098

1,092

$0.480

$0.219

$0.138

$0.098

DigiKey

USA . 9,953 parts In-Stock

1+ parts

$0.590

100+ parts

$0.232

1k+ parts

$0.156

10k+ parts

-

9,953

$0.590

$0.232

$0.156

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Adafruit Industries

USA . 76 parts In-Stock

1+ parts

$1.580

100+ parts

$1.501

1k+ parts

$1.501

10k+ parts

-

76

$1.580

$1.501

$1.501

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Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.117

10,000

-

-

-

$0.117

Master Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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$0.092

10,000

-

-

-

$0.092

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

4,000

-

-

-

$0.098

RS (Exports)

UK . 3,850 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.121

10k+ parts

$0.093

3,850

-

$0.156

$0.121

$0.093

Flip Electronics (Authorized)

USA . 1,805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,805

-

-

-

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Element14

Singapore . 699 parts In-Stock

1+ parts

-

100+ parts

$0.318

1k+ parts

$0.191

10k+ parts

$0.188

699

-

$0.318

$0.191

$0.188

Farnell

UK . 679 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

$0.124

10k+ parts

-

679

-

$0.164

$0.124

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Chip1Stop

Japan . 244 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.147

10k+ parts

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244

-

$0.159

$0.147

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,588 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

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2,588

$0.093

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.131

100+ parts

-

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10

$0.131

-

-

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Chip Stock

USA . 61,000 parts In-Stock

1+ parts

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61,000

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IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.130

10,000

-

-

-

$0.130

Vyrian

USA . 3,856 parts In-Stock

1+ parts

-

100+ parts

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3,856

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Flip Electronics

USA . 1,805 parts In-Stock

1+ parts

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100+ parts

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1,805

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,473 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

3,473

$0.080

-

-

-

Semicontronic

India . 3,029 parts In-Stock

1+ parts

$0.080

100+ parts

$0.078

1k+ parts

$0.078

10k+ parts

-

3,029

$0.080

$0.078

$0.078

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Corphita

USA . 2,888 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

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2,888

$0.088

-

-

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Corohmni

South Africa . 231 parts In-Stock

1+ parts

$0.092

100+ parts

-

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231

$0.092

-

-

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Component Stockers USA

USA . 26,517 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

26,517

$0.100

$0.090

$0.080

$0.080

Argo Parts USA

USA . 4,505 parts In-Stock

1+ parts

$0.131

100+ parts

-

1k+ parts

-

10k+ parts

$0.127

4,505

$0.131

-

-

$0.127

Continental Prestige Electronics

USA . 1,891 parts In-Stock

1+ parts

$0.296

100+ parts

$0.165

1k+ parts

$0.080

10k+ parts

$0.075

1,891

$0.296

$0.165

$0.080

$0.075

Advanced Electronics

New Zealand . 76 parts In-Stock

1+ parts

$1.580

100+ parts

$1.501

1k+ parts

$1.501

10k+ parts

-

76

$1.580

$1.501

$1.501

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Aztec Data Supply Inc.

USA . 4,621 parts In-Stock

1+ parts

$1.957

100+ parts

-

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4,621

$1.957

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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36,530

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QUARKTWIN TECHNOLOGY LTD

USA . 23,365 parts In-Stock

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23,365

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Perfect Parts

USA . 15,680 parts In-Stock

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15,680

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GreenTree Electronics

Israel . 14,000 parts In-Stock

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14,000

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SupplyDigital Components

Austria . 8,081 parts In-Stock

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8,081

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-

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Problanco Electronics

Mexico . 7,070 parts In-Stock

1+ parts

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7,070

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-

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Kulean Microsystems

USA . 7,044 parts In-Stock

1+ parts

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7,044

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TANS Electronics

Latvia . 5,706 parts In-Stock

1+ parts

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5,706

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Kepictronics

USA . 2,400 parts In-Stock

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2,400

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-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.129

1k+ parts

$0.125

10k+ parts

$0.122

2,000

-

$0.129

$0.125

$0.122

UHIMA Technologies

Türkiye . 845 parts In-Stock

1+ parts

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845

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Supply Digital

USA . 731 parts In-Stock

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731

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Overview

Discover the KSD1616AYTA by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that is designed to deliver exceptional performance and reliability. As a leading manufacturer in the industry, Onsemi carries a strong reputation for producing top-notch electronic components. The KSD1616AYTA is perfect for various applications, especially in switching circuits. With its NPN polarity and single configuration, this transistor offers seamless functionality and ease of use. Its compact round package body material ensures durability and flexibility. Experience the value this product brings, with a maximum collector-emitter voltage of 60V and maximum collector current of 1A. Unlock new possibilities with the KSD1616AYTA and enjoy smooth operation and impressive results.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material choice provides durability and resistance to external factors, making the transistor suitable for varied operating environments.

Polarity or Channel Type:

NPN - The NPN configuration allows for easy integration with other electronic components and facilitates desired circuit connections.

Configuration:

SINGLE - The single configuration simplifies circuit design and enhances overall reliability by eliminating inter-component interference.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor ensures efficient and reliable control of electrical currents.

Package Shape:

ROUND - The round shape of the package allows for compact and space-saving installations, ideal for applications with limited mounting area.

Terminal Form:

THROUGH-HOLE - The through-hole terminal form allows for sturdy and secure connections, offering excellent resistance to mechanical stress and vibrations.

No. of Terminals:

3 - With three terminals, this transistor enables precise control and flexibility in circuit designs.

Maximum Power Dissipation (Abs):

0.75 W - This high power dissipation capability ensures efficient handling of heat, making the transistor suitable for demanding applications.

Package Style (Meter):

CYLINDRICAL - The cylindrical package style eases assembly and enhances stability within the circuit, ensuring long-term reliability.

Minimum DC Current Gain (hFE):

135 - With a minimum hFE value of 135, this transistor amplifies small input signals effectively, providing greater signal integrity and accuracy.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for reliable performance even in harsh environmental conditions, ensuring product longevity.

Maximum Collector-Emitter Voltage:

60 V - With a high maximum voltage rating, this transistor can handle elevated voltage levels, making it suitable for various applications.

Transistor Element Material:

SILICON - The silicon material used in this transistor offers excellent electrical conductivity and high thermal stability for improved performance.

Maximum Collector Current (IC):

1 A - The high maximum collector current capability ensures efficient handling of large currents, enabling compatibility with a wide range of applications.

Terminal Finish:

MATTE TIN - The matte tin terminal finish provides enhanced solderability, ensuring reliable and long-lasting connections during assembly.

Terminal Position:

BOTTOM - The bottom terminal position allows for easy integration onto PCBs and facilitates efficient soldering during manufacturing processes.

Nominal Transition Frequency (fT):

160 MHz - With a high nominal transition frequency, this transistor offers excellent high-frequency response, making it suitable for applications requiring fast switching times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD1616AYTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

135

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSD1616AYTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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