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KSD227YBU

Fairchild Semiconductor

KSD227YBU by Fairchild Semiconductor

Fairchild Semiconductor's KSD227YBU is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min DC current gain of 120 and can handle a max collector current of 0.3 A. With a max operating temperature of 150°C and collector-emitter voltage of 25 V, it comes in a cylindrical package suitable for through-hole mounting.

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$0.035

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Rochester

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DigiKey

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Digiode

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Vyrian

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AZTECH Wire

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Continental Prestige Electronics

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Glotronic Ltd.

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Overview

Enhance your electronic projects with the KSD227YBU Small Signal Bipolar Junction Transistor by Fairchild Semiconductor. This high-quality NPN transistor is perfect for amplifier applications, offering a minimum DC current gain of 120 and a maximum power dissipation of 0.4W. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 25V, this transistor provides reliable performance in a variety of circuits. Trust Fairchild Semiconductor for exceptional quality and innovation, and experience the value and benefits that the KSD227YBU transistor brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and good thermal conductivity, making the product reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making it suitable for amplifier applications.

Configuration: SINGLE

Simplified design and operation, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Package Shape: ROUND

Compact and space-efficient design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and installation onto circuit boards, providing a secure connection.

No. of Terminals: 3

Simple and straightforward connectivity, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.4 W

Can handle higher power levels, suitable for applications requiring higher power dissipation.

Package Style (Meter): CYLINDRICAL

Offers a sleek and uniform design, enhancing the overall aesthetic appeal of the product.

Minimum DC Current Gain (hFE): 120

Ensures stable and consistent amplification performance, improving the reliability of the product.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in various environments.

Maximum Collector-Emitter Voltage: 25 V

Handles high voltage levels, suitable for applications requiring higher voltage capabilities.

Transistor Element Material: SILICON

Provides excellent semiconductor properties, ensuring efficient and reliable performance.

Maximum Collector Current (IC): 0.3 A

Capable of handling higher current levels, suitable for applications requiring higher current capacities.

Terminal Finish: MATTE TIN

Corrosion-resistant finish, ensuring long-term reliability and performance.

Terminal Position: BOTTOM

Allows for easy integration into circuit boards, ensuring a secure and stable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD227YBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

KSD227YBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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