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KSD227GTA

Fairchild Semiconductor

KSD227GTA by Fairchild Semiconductor

KSD227GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.4W, min DC current gain of 200 (hFE), and max collector-emitter voltage of 25V. The package is cylindrical in shape with matte tin terminal finish, suitable for through-hole mounting at temperatures up to 150°C.

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Overview

Upgrade your electronic devices with the KSD227GTA by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor guarantees top-quality products that are reliable and efficient. This NPN transistor is perfect for amplifier applications, offering a maximum power dissipation of 0.4W and a minimum DC current gain of 200. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 25V, this transistor provides superior performance and durability. Trust Fairchild Semiconductor to deliver high-value components that will enhance your projects and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and thermal stability, making the transistor suitable for a wide range of operating conditions.

Polarity or Channel Type: NPN

NPN transistor configuration allows for easy integration into existing circuits for amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly, reducing potential points of failure.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification tasks.

Package Shape: ROUND

Round package shape facilitates efficient PCB layout and soldering, saving space and assembly time.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mechanical mounting and easy soldering, enhancing overall reliability of the transistor.

No. of Terminals: 3

Three terminals enable essential connections for power, ground, and signal, ensuring proper functionality in the circuit.

Maximum Power Dissipation (Abs): 0.4 W

High maximum power dissipation rating allows the transistor to handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers robust protection against external elements and mechanical stress, increasing the lifespan of the transistor.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures consistent and stable amplification of input signals, maintaining signal integrity in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without performance degradation, suitable for various industrial environments.

Maximum Collector-Emitter Voltage: 25 V

High maximum collector-emitter voltage rating allows the transistor to handle voltage spikes and fluctuations without breakdown, ensuring reliable operation in diverse applications.

Transistor Element Material: SILICON

Silicon material for the transistor element offers excellent electrical properties, ensuring high performance and reliability in signal amplification tasks.

Maximum Collector Current (IC): 0.3 A

High maximum collector current rating enables the transistor to handle moderate current levels, making it suitable for amplification circuits with varying input signal strengths.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring secure electrical connections and long-term reliability in the circuit.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting and soldering process, making it easy to integrate the transistor into the circuit board with minimal effort.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD227GTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

KSD227GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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