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KSD261CGTA

Onsemi

KSD261CGTA by Onsemi

KSD261CGTA by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 200 and can handle a max collector current of 0.5A. With a max operating temperature of 150 °C and collector-emitter voltage of 20V, it is suitable for various electronic circuits.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 163,438 parts In-Stock

1+ parts

-

100+ parts

$0.033

1k+ parts

$0.028

10k+ parts

$0.025

163,438

-

$0.033

$0.028

$0.025

DigiKey

USA . 60,000 parts In-Stock

1+ parts

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$0.040

60,000

-

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$0.040

Verical

USA . 58,000 parts In-Stock

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58,000

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Flip Electronics (Authorized)

USA . 21,327 parts In-Stock

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21,327

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Vyrian

USA . 1,645 parts In-Stock

1+ parts

$0.030

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-

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1,645

$0.030

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Digiode

USA . 1,010 parts In-Stock

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$0.031

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1,010

$0.031

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Chip Stock

USA . 52,000 parts In-Stock

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52,000

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Flip Electronics

USA . 21,327 parts In-Stock

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21,327

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DigiKey Marketplace

USA . 21,327 parts In-Stock

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21,327

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Distributors (Availability)

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Corphita

USA . 434 parts In-Stock

1+ parts

$0.030

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434

$0.030

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Corohmni

South Africa . 159 parts In-Stock

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$0.030

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159

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Continental Prestige Electronics

USA . 163,638 parts In-Stock

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$0.039

163,638

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$0.039

A-Z Elektronik GmbH

Germany . 6,471 parts In-Stock

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6,471

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TANS Electronics

Latvia . 4,889 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,314 parts In-Stock

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4,314

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SupplyDigital Components

Austria . 4,260 parts In-Stock

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Supply Digital

USA . 1,981 parts In-Stock

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Perfect Parts

USA . 1,956 parts In-Stock

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1,956

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Kulean Microsystems

USA . 1,723 parts In-Stock

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1,723

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Problanco Electronics

Mexico . 901 parts In-Stock

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901

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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866

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Overview

Experience the power of quality with the KSD261CGTA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors that are reliable and versatile. Perfect for amplifier applications, this NPN transistor offers a maximum power dissipation of 0.5W and a minimum DC current gain of 200. With a maximum collector-emitter voltage of 20V and a maximum collector current of 0.5A, this transistor provides exceptional performance for your electronic projects. Trust Onsemi to provide you with high-quality components that will elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits, simplifying the design process.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards, ensuring proper signal transfer.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels in amplification circuits.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures efficient signal amplification and stable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it reliable in various environments.

Maximum Collector-Emitter Voltage: 20 V

A maximum collector-emitter voltage of 20V allows for flexibility in voltage requirements in amplifier circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-term stability in amplifier applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and reliable solder connections for long-term durability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering on circuit boards, simplifying the assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSD261CGTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

KSD261CGTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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