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2N4125BU

Fairchild Semiconductor

2N4125BU by Fairchild Semiconductor

2N4125BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at a max temp of 150°C with a max collector current of 0.2A.

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Overview

Elevate your electronic designs with the 2N4125BU by Fairchild Semiconductor, a top-tier manufacturer known for quality and innovation. As part of the Small Signal Bipolar Junction Transistors category, this PNP transistor is ideal for switching applications, offering reliable performance and durability. With a minimum DC current gain of 25 and a maximum collector-emitter voltage of 30V, this transistor delivers exceptional functionality. Trust Fairchild Semiconductor to provide cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your projects today with the 2N4125BU and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, making installation and replacement straightforward.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels, suitable for various applications without overheating.

Maximum Collector-Emitter Voltage: 30 V

Can withstand relatively high voltages, making it versatile in different circuit scenarios.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate current levels, suitable for various switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4125BU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4125BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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