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MMBT4401WT1

Onsemi

MMBT4401WT1 by Onsemi

MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,876 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

2,876

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$0.030

$0.025

$0.023

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Digiode

USA . 2,275 parts In-Stock

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$0.024

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2,275

$0.024

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 12,004 parts In-Stock

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Corphita

USA . 2,138 parts In-Stock

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$0.022

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Corohmni

South Africa . 415 parts In-Stock

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$0.025

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415

$0.025

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AZTECH Wire

Italy . 1,007 parts In-Stock

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$18.420

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$18.420

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Kulean Microsystems

USA . 7,961 parts In-Stock

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SupplyDigital Components

Austria . 6,502 parts In-Stock

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TANS Electronics

Latvia . 6,388 parts In-Stock

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Problanco Electronics

Mexico . 2,370 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Discover the Onsemi MMBT4401WT1, a top-quality NPN Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum VCEsat of only 0.75 V and a minimum DC current gain of 40, this transistor offers efficient performance in a compact package. Manufactured by the renowned Onsemi, known for their reliability and innovation, the MMBT4401WT1 guarantees superior functionality and durability. Ideal for various electronic projects, this transistor provides customers with exceptional value and benefits, making it a must-have component for any application requiring high-speed switching capabilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high switching speeds.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 0.75 V

Low VCEsat value indicates high efficiency and minimal power loss.

Package Shape: RECTANGULAR

Easy to mount and integrate into existing circuits.

Terminal Form: GULL WING

Facilitates easy soldering and strong mechanical connections.

No. of Terminals: 3

Simple and straightforward connection layout.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power handling capability, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package design for space-constrained applications.

Maximum Power Dissipation Ambient: 0.15 W

Ability to dissipate heat efficiently, ensuring stable operation.

Minimum DC Current Gain (hFE): 40

Higher DC current gain provides better amplification and control.

Maximum Operating Temperature: 150 °C

Wide temperature range for versatile usage in various environments.

Maximum Collector-Base Capacitance: 6.5 pF

Low capacitance helps in reducing signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching operations.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures, ideal for industrial and automotive applications.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current loads in various applications.

Maximum Turn Off Time (toff): 255 ns

Fast turn-off time helps in rapid switching and control.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Offers flexibility in mounting and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for efficient soldering.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability for robust soldering processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for faster signal processing and switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT4401WT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

.75 V

Trade Compliance

MMBT4401WT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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